Manufacturing method for single-crystal silicon rod and single-crystal furnace

The method according to 1, comprising:

• further feeding the crucible (7) with the silicon material when a/b satisfies 1.2≤a/b≤1.5 during crystal pulling.

The method according to 1, wherein, after crystal pulling is completed, the silicon material has a crucible retention rate of 30% to 40%, and/or

• after a single crystal pulling is completed, the silicon material has a crucible retention amount ranging from 300 kg to 410 kg.

The method according to 1, wherein,

• when the silicon material is initially fed into the crucible (7), a layer of the silicon material with a linear width of 20 mm to 70 mm is firstly fed, the silicon material with a linear width of 70 mm to 210 mm is then fed, and the silicon material with the linear width of 20 mm to 70 mm is fed between the silicon material with the linear width of 70 mm and 210 mm and an inner wall of the crucible (7).

The method according to 4, wherein,

• when the silicon material is initially fed into the crucible (7), a layer of 40 kg to 90 kg of the silicon material with a linear width of 20 mm to 70 mm is firstly fed, 40 kg to 210 kg of the silicon material with a linear width of 70 mm to 210 mm is then fed, and the silicon material with the linear width of 20 mm to 70 mm is fed between the silicon material with the linear width of 70 mm and 210 mm and the inner wall of the crucible (7);
• and
• above steps are repeated until the initial feeding is completed.

The method according to 5, wherein

• when the steps of first charging a layer of 40 kg to 90 kg of the silicon material with a linear width of 20 mm to 70 mm, then charging 40 kg to 210 kg of the silicon material with a linear width of 70 mm to 210 mm, and charging the silicon material with the linear width of 20 mm to 70 mm between the silicon material of 70 mm and 210 mm and the inner wall of the crucible (7) are repeated, and
• mass of the silicon material with the linear width of 70 mm to 210 mm that is fed at each time gradually decreases.

The method according to 4, wherein the silicon material with the linear width of 20 mm to 70 mm accounts for 27% to 35% of a total amount of the silicon material that is initially fed.

The method according to 12 wherein, during the manufacturing, when the linear width of the silicon material is less than 150 mm, a furnace pressure of the single-crystal furnace is adjusted to 4 Torr to 8 Torr.

The method according to 12, wherein, during the manufacturing, when the linear width of the silicon material is less than 150 mm, a flow rate of the argon that is introduced is c, where 100 lmp<c≤150 lmp.

The method according to 15, wherein moving the crucible (7) into the single-crystal furnace comprises:

• extending an upper edge of the crucible (7) into an upper edge of a first insulation member of the single-crystal furnace by 50 mm to 130 mm.