Pure copper material, insulating substrate, and electronic device
AssigneeMitsubishi Materials Corporation
InventorsTakumi ODAIRA, Yuki ITO, Kenichiro KAWASAKI, Kazunari MAKI
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Abstract
This pure copper material includes Cu in an amount of 99.9 mass % or more and 99.999 mass % or less, an average crystal grain size in a rolled surface is 10 μm or more, and when a measurement area of 1 mm2 or more is measured by an EBSD method at a measurement interval of 1 μm, measurement points at which a CI value obtained by an analysis using data analysis software OIM is 0.1 or less are excluded, and boundaries between adjacent pixels with a misorientation of 5° or more are regarded as crystal grain boundaries, an average of local orientation spread (LOS) is 2.00° or less.
Claims15
A pure copper material, comprising:
- Cu, wherein
- an amount of Cu is in a range of 99.9 mass % or more and 99.999 mass % or less,
- an average crystal grain size in a rolled surface is 10 m or more, and
- when a measurement area of 1 mm2 or more is measured by an EBSD method at a measurement interval of 1 μm, measurement points at which a CI value obtained by an analysis using data analysis software OIM is 0.1 or less are excluded, and boundaries between adjacent pixels with a misorientation of 5° or more are regarded as crystal grain boundaries, an average of local orientation spread (LOS) is 2.00° or less.
Dependencies are inferred from the claim text.