Gas barrier film and method for manufacturing gas barrier film

A method for manufacturing a gas barrier film containing a gad barrier layer, the method comprising:

• forming a gas barrier precursor layer on a base material film by using a composition containing a silicon-containing macromolecular compound, and
• forming the gas barrier layer by modifying the gas barrier precursor layer by subjecting a surface part of the gas barrier precursor layer to plasma irradiation in the presence of helium gas for 300 seconds or longer,
• wherein
• the gas barrier layer contains silicon and oxygen, and
• the gas barrier layer has a region in a thickness direction, the region containing silicon, oxygen, and nitrogen and having an element ratio of nitrogen of 5 at % or greater and a thickness dM of 30 nm or greater.

A method for manufacturing a gas barrier film containing a gad barrier layer, the method comprising:

• forming a gas barrier precursor layer on a base material film by using a composition containing a silicon-containing macromolecular compound, and
• forming the gas barrier layer by modifying the gas barrier precursor layer by subjecting a surface part of the gas barrier precursor layer to plasma irradiation in the presence of helium gas for 700 seconds or longer,
• wherein
• the gas barrier layer contains silicon and oxygen, and
• the gas barrier layer has a region in a thickness direction, the region containing silicon, oxygen, and nitrogen and having an element ratio of nitrogen of 5 at % or greater and a thickness dM of 30 nm or greater.

A method for manufacturing a gas barrier film containing a gas barrier layer, the method comprising:

• forming a gas barrier precursor layer on a base material film by using a composition containing a silicon-containing macromolecular compound, and
• forming the gas barrier layer by modifying the gas barrier precursor layer by subjecting a surface part of the gas barrier precursor layer to plasma irradiation in the presence of helium gas for 300 seconds or longer,
• wherein
• the gas barrier layer contains silicon and oxygen, and
• in a case where the gas barrier film is cut into a square shape that has an area of 50.5 mm×50.5 mm and is sectioned into 64 squares each having an identical shape, a number of sections having a water vapor transmission rate in an atmosphere at 40° C. and a relative humidity of 90% of less than 1.0×10−3 g/m2/day is 95% or greater of a total number of sections of the sectioned square-shaped gas barrier film.

A method for manufacturing a gas barrier film containing a gas barrier layer, the method comprising:

• forming a gas barrier precursor layer on a base material film by using a composition containing a silicon-containing macromolecular compound, and
• forming the gas barrier layer by modifying the gas barrier precursor layer by subjecting a surface part of the gas barrier precursor layer to plasma irradiation in the presence of helium gas for 700 seconds or longer,
• wherein
• the gas barrier layer contains silicon and oxygen, and
• in a case where the gas barrier film is cut into a square shape that has an area of 50.5 mm×50.5 mm and is sectioned into 64 squares each having an identical shape, a number of sections having a water vapor transmission rate in an atmosphere at 40° C. and a relative humidity of 90% of less than 1.0×10−3 g/m2/day is 95% or greater of a total number of sections of the sectioned square-shaped gas barrier film.