Method of manufacturing photonic integrated device based on single-step active layer epitaxial growth
AssigneeElectronics and Telecommunications Research Institute
InventorsO Kyun KWON, Nam Je KIM, Ho Sung KIM, Mi Ran PARK, Seung Chul LEE, Won Seok HAN
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Abstract
The present invention relates to a method of manufacturing a photonic integrated device based on single-step active layer epitaxial growth, and the method includes forming, on a substrate, a reference region having a first bandgap and a region having a bandgap, which is red-shifted relative to the first bandgap, through active layer epitaxial growth, and applying a blue-shift to the substrate to form a region having a second bandgap that is blue-shifted relative to the first bandgap.
Claims20
A method of manufacturing a photonic integrated device based on single-step active layer epitaxial growth, the method comprising:
- forming, on a substrate, a reference region having a first bandgap and a region having a bandgap, which is red-shifted relative to the first bandgap, through active layer epitaxial growth;
- and
- applying a blue-shift to the substrate to form a region having a second bandgap that is blue-shifted relative to the first bandgap.
A method of manufacturing a photonic integrated device based on single-step active layer epitaxial growth, the method comprising:
- forming a reference region having a first bandgap on a substrate through active layer epitaxial growth;
- and
- applying a red-shift and a blue-shift to the substrate to form a region having a bandgap that is red-shifted relative to the first bandgap and a region having a second bandgap that is blue-shifted relative to the first bandgap.
A method of manufacturing a photonic integrated device, the method comprising:
- applying a red-shift and a blue-shift to a substrate, on which an active layer having a reference bandgap is formed, to form a region having a bandgap that is red-shifted relative to the reference bandgap and a region having a bandgap that is blue-shifted relative to the reference bandgap;
- and
- forming an electrode on the substrate.
Dependencies are inferred from the claim text.