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US 2025/0105588 A1Published application
Semiconductor light emitting device
AssigneeRohm Co., Ltd.
InventorYotaro HIGASE
Life of this patent
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Abstract
A semiconductor light emitting device comprises a current confinement layer and a semiconductor light emitting stack. The semiconductor light emitting stack is disposed on the current confinement layer and has a bottom surface in contact with the current confinement layer. The current confinement layer includes an insulating layer and a plurality of conductive portions. The plurality of conductive portions are disposed in the insulating layer in contact with the bottom surface. An area ratio of the plurality of conductive portions to the bottom surface is 7% or more and 15% or less.
Claims7
A semiconductor light emitting device comprising:
- a current confinement layer;
- and
- a semiconductor light emitting stack disposed on the current confinement layer and having a bottom surface in contact with the current confinement layer,
- the current confinement layer including an insulating layer and a plurality of conductive portions disposed in the insulating layer in contact with the bottom surface,
- an area ratio of the plurality of conductive portions to the bottom surface being 7% or more and 15% or less,
- the area ratio being a ratio to a first area of the bottom surface of a second area of the plurality of conductive portions overlapping the bottom surface in a plan view of the bottom surface.
3 more elements
Dependencies are inferred from the claim text.