Semiconductor device with layer transfer
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
Estimating the term…
Abstract
An integrated circuit is formed on a substrate of single crystal silicon carbide or a composite substrate with a top layer of single crystal silicon carbide (and optionally a bottom layer of polycrystalline silicon carbide or a sacrificial material). An active layer (which may be an oxide such as Ga2O3) is epitaxially grown on the substrate, and an active device is formed in the active layer. A handle is bonded to a top surface of the active device. At least a portion of the substrate is removed from a backside of the integrated circuit.
Claims28
A method of fabricating an integrated circuit, the method comprising:
- providing a composite substrate having a top substrate layer comprising single crystal silicon carbide and a bottom substrate layer comprising polycrystalline silicon carbide;
- epitaxially growing an active layer on the top substrate layer;
- forming an active device in and on the active layer;
- bonding a handle to a top surface of the active device;
- and
- removing the bottom substrate layer.
A method of fabricating an integrated circuit, the method comprising:
- providing a substrate comprising single crystal silicon carbide;
- epitaxially growing an active layer on the substrate, wherein the active layer comprises an oxide;
- forming an active device in and on the active layer;
- bonding a handle to a top surface of the active device;
- and
- removing at least a portion of the substrate from a backside of the integrated circuit.
A method of fabricating an integrated circuit, the method comprising:
- providing a composite substrate having a top substrate layer comprising single crystal silicon carbide and a bottom substrate layer comprising a sacrificial material operable to form a structural support for integrated circuit device formation;
- forming a single crystal transition layer on the top substrate layer;
- epitaxially growing an active layer on the single crystal transition layer;
- forming an active device in and on the active layer;
- bonding a handle to a top surface of the active device;
- and
- removing the bottom substrate layer.
Dependencies are inferred from the claim text.