Insulation film manufacturing method of semiconductor process
OwnerSung Kil CHOinventor
Life of this patent
Estimating the term…
Abstract
The present invention provides an insulating film manufacturing method of a semiconductor process, the method comprises the steps of: placing a wafer in a processing chamber; by supplying a source gas to the processing chamber at a first pressure higher than an atmospheric pressure, forming an insulating film on the wafer as at least one of an oxidation process and a nitridation process proceeds; by supplying a purge gas to the processing chamber, purging the source gas; and, by supplying atmospheric gas to the processing chamber at a second pressure higher than atmospheric pressure, strengthening the insulation film as the heat treatment process proceeds.
Claims9
An insulation film manufacturing method of a semiconductor process, the method comprising:
- disposing a wafer in a processing area;
- forming an insulation film on the wafer by supplying source gas to the processing area at a first pressure higher than an atmospheric pressure to thus perform at least one of an oxidation process and a nitridation process;
- purging the source gas by supplying purge gas to the processing area;
- and
- strengthening the insulation film by supplying atmospheric gas to the processing area at a second pressure higher than the atmospheric pressure to thus perform a heat treatment process.
Dependencies are inferred from the claim text.