Repair of a silicon-based bondcoat

Abstract

Methods are provided for repairing a defect on a silicon-containing substrate. The method may include applying a powder mixture into the defect of an existing coating on a surface of the silicon-containing substrate, wherein the powder mixture comprises silicon and germanium at a Ge mole fraction of 0.01 to 0.3; and heat treating the powder mixture within the defect at a sintering temperature that is 1150° C. to 1400° C. to form a repaired bondcoat within the defect. Repaired components are also provided that include a repaired bondcoat formed within the defect on the silicon-containing substrate, wherein the repaired bondcoat comprises a silicon-germanium phase comprising a Ge mole fraction of germanium of 0.01 to 0.3 and a Si mole fraction of silicon of 0.7 to 0.99.

Dependencies are inferred from the claim text.