# US 2025/0098554 A1 · Semiconductor device including selector > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0098554 A1 - Document ID: US20250098554A1 - Status: Published application - Kind: A1 - Application number: 18/594,987 - Filed: 2024-03-04 - Published: 2025-03-20 - Earliest claimed: 2023-09-19 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Tae Jung HA - Web page: https://patentgrep.com/patent/US20250098554A1 ## CPC - H10N 70/043: {by implantation} - H10B 63/20: {comprising selection components having two electrodes, e.g. diodes} - H10B 63/24: {of the Ovonic threshold switching type} - H10B 63/80: {Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays} - H10B 63/845: {the switching components being connected to a common vertical conductor} - H10N 70/021: {Formation of switching materials, e.g. deposition of layers} - H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect} - H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} - H10N 70/841: {Electrodes} - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A semiconductor device includes: a selector pattern including an insulating material having dopants implanted to the insulating material along an implantation direction and having a first sidewall and a second sidewall facing the first sidewall, the selector pattern configured to exhibit different electrical conducting characteristics in response to an applied voltage with respect to a threshold voltage; and a first electrode layer and a second electrode layer respectively formed over the first sidewall and the second sidewall of the selector pattern, wherein the implantation direction of the dopants is different from a direction of a current flowing through the selector pattern between the first electrode layer and the second electrode layer when the selector pattern is turned on. ## Claims ### Claim 1 A semiconductor device, comprising: a selector pattern including an insulating material having dopants implanted to the insulating material along an implantation direction and having a first sidewall and a second sidewall facing the first sidewall, the selector pattern configured to exhibit different electrical conducting characteristics in response to an applied voltage with respect to a threshold voltage; and a first electrode layer and a second electrode layer respectively formed over the first sidewall and the second sidewall of the selector pattern, wherein the implantation direction of the dopants is different from a direction of a current flowing through the selector pattern between the first electrode layer and the second electrode layer when the selector pattern is turned on. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein each of the first electrode layer and the second electrode layer has a shape where a width of a lowermost surface is maximum. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, further comprising: a first contact plug having an upper surface in contact with a lower surface of the first electrode layer and disposed under the first electrode layer; and a second contact plug having a sidewall in contact with the second electrode layer at one side of the second electrode layer. ### Claim 4 (depends on 3) The semiconductor device according to claim 3, further comprising: a first conductive line connected to the first contact plug and disposed under the first contact plug; and a second conductive line connected to the second contact plug and disposed over the second contact plug. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, further comprising: a memory pattern interposed between the first contact plug and the first conductive line. ### Claim 6 (depends on 4) The semiconductor device according to claim 4, further comprising: a memory pattern interposed between the second contact plug and the second conductive line. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, further comprising: a memory pattern having an upper surface in contact with a lower surface of the first electrode layer and disposed under the first electrode layer; and a second contact plug having a sidewall in contact with the second electrode layer at one side of the second electrode layer. ### Claim 8 (depends on 7) The semiconductor device according to claim 7, further comprising: a first conductive line connected to the memory pattern and disposed under the memory pattern; and a second conductive line connected to the second contact plug and disposed over the second contact plug. ### Claim 9 (depends on 7) The semiconductor device according to claim 7, wherein a width of the memory pattern decreases in a downward direction. ### Claim 10 A semiconductor device comprising: a first conductive line and a second conductive line that are spaced apart from each other in a vertical direction; a selector pattern interposed between the first conductive line and the second conductive line in the vertical direction and including a first sidewall and a second sidewall facing the first sidewall in a horizontal direction, the selector pattern configured to exhibit different electrical conducting characteristics in response to an applied voltage with respect to a threshold voltage; a first electrode layer and a second electrode layer respectively formed over the first sidewall and the second sidewall of the selector pattern; a first contact plug having an upper surface in contact with a lower surface of the first electrode layer, the first contact plug electrically connected to the first conductive line and disposed over the first conductive line; and a second contact plug disposed at one side of the second electrode layer in the horizontal direction and having a sidewall in contact with the second electrode layer, the second contact plug electrically connected to the second conductive line and disposed under the second conductive line. ### Claim 11 (depends on 10) The semiconductor device according to claim 10, wherein the selector pattern includes an insulating material having dopants implanted to the insulating material along an implantation direction that is different from a direction of a current flowing through the selector pattern between the first electrode layer and the second electrode layer in response to the selector pattern being turned on. ### Claim 12 (depends on 10) The semiconductor device according to claim 10, wherein the first electrode layer and the second electrode layer have widths that increase in a downward direction. ### Claim 13 (depends on 10) The semiconductor device according to claim 10, wherein the selector pattern includes a first selector pattern and a second selector pattern that are arranged in the horizontal direction, the first electrode layer includes a first portion and a second portion that are respectively formed over first sidewalls of the first selector pattern and the second selector pattern, the second electrode layer includes a first portion and a second portion that are respectively formed over second sidewalls of the first selector pattern and the second selector pattern, the first contact plug includes a first portion contacting the first portion of the first electrode layer and a second portion contacting the second portion of the first electrode layer, and the second contact plug includes a first portion contacting the first portion of the second electrode layer and a second portion contacting the second portion of the second electrode layer. ### Claim 14 (depends on 13) The semiconductor device according to claim 13, wherein the first portion of the second electrode layer and the second portion of the first electrode layer are disposed to face each other. ### Claim 15 (depends on 10) The semiconductor device according to claim 10, wherein the selector pattern includes a first selector pattern and a second selector pattern that are arranged in the horizontal direction, the first electrode layer includes a first portion and a second portion that are respectively formed over first sidewalls of the first selector pattern and the second selector pattern, the second electrode layer includes a first portion and a second portion that are respectively formed over second sidewalls of the first selector pattern and the second selector pattern, the first contact plug includes a first portion contacting the first portion of the first electrode layer and a second portion contacting the second portion of the first electrode layer, and the first portion and the second portion of the second electrode layer face each other and are in common contact with the second contact plug. ### Claim 16 (depends on 10) The semiconductor device according to claim 10, further comprising: a memory pattern interposed between the first contact plug and the first conductive line. ### Claim 17 (depends on 10) The semiconductor device according to claim 10, further comprising: a memory pattern interposed between the second contact plug and the second conductive line. ### Claim 18 A semiconductor device, comprising: a first conductive line and a second conductive line that are spaced apart from each other in a vertical direction; a selector pattern interposed between the first conductive line and the second conductive line in the vertical direction and including a first sidewall and a second sidewall that face each other in a horizontal direction; a first electrode layer and a second electrode layer that are respectively formed over the first sidewall and the second sidewall of the selector pattern; a memory pattern having an upper surface in contact with a lower surface of the first electrode layer, the memory pattern electrically connected to the first conductive line and disposed over the first conductive line; and a contact plug disposed at one side of the second electrode layer in the horizontal direction and having a sidewall in contact with the second electrode layer, the contact plug electrically connected to the second conductive line and disposed under the second conductive line. ### Claim 19 (depends on 18) The semiconductor device according to claim 18, wherein the selector pattern includes an insulating material having dopants implanted to the insulating material along an implantation direction that is different from a direction of a current flowing through the selector pattern between the first electrode layer and the second electrode layer in response to the selector pattern being turned on. ### Claim 20 (depends on 18) The semiconductor device according to claim 18, wherein the first electrode layer and the second electrode layer have widths that increase in a downward direction. ### Claim 21 (depends on 18) The semiconductor device according to claim 18, wherein the selector pattern includes a first selector pattern and a second selector pattern that are arranged in the horizontal direction, the first electrode layer includes a first portion and a second portion that are respectively formed over first sidewalls of the first selector pattern and the second selector pattern, the second electrode layer includes a first portion and a second portion that are respectively formed over second sidewalls of the first selector pattern and the second selector pattern, and the contact plug includes a first portion contacting the first portion of the second electrode layer and a second portion contacting the second portion of the second electrode layer. ### Claim 22 (depends on 21) The semiconductor device according to claim 21, wherein the first portion of the second electrode layer and the second portion of the first electrode layer face each other. ### Claim 23 (depends on 18) The semiconductor device according to claim 18, wherein the selector pattern includes a first selector pattern and a second selector pattern that are arranged in the horizontal direction, the first electrode layer includes a first portion and a second portion that are respectively formed over first sidewalls of the first selector pattern and the second selector pattern, the second electrode layer includes a first portion and a second portion that are respectively formed over second sidewalls of the first selector pattern and the second selector pattern, and the first portion and the second portion of the second electrode layer face each other and are in common contact with the contact plug.