Fabrication of Through-Silicon Vias
OwnerRobert Miller, Jaber Derakhshandeh +1inventors
InventorsRobert Miller, Jaber Derakhshandeh, Anna Herr
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Abstract
A through-silicon via (TSV) and methods for its manufacture are disclosed. An example TSV includes a core that extends through a substrate along an axis. The core includes a conductive material. The TSV also includes an outer layer that is disposed about the axis. The outer layer is at least partially surrounding the core. The outer layer includes a superconductive material. The TSV additionally includes an insulating layer that electrically insulates the core and the outer layer from one another.
Claims20
A through-silicon via (TSV) comprising:
- a core, wherein the core extends through a substrate along an axis, wherein the core comprises a conductive material;
- an outer layer, wherein the outer layer is disposed about the axis and at least partially surrounding the core, wherein the outer layer comprises a superconductive material;
- and
- an insulating layer, wherein the insulating layer electrically insulates the core and the outer layer from one another.
A method for forming a through-silicon via (TSV), the method comprising:
- etching a cavity in a substrate;
- forming a first insulating layer along a sidewall of the cavity;
- forming an outer layer on the first insulating layer within the cavity, wherein the outer layer comprises a superconductive material;
- forming a second insulating layer on the outer layer within the cavity;
- forming a seed layer on the second insulating layer within the cavity;
- and
- forming a core on the seed layer within the cavity, wherein the core comprises a conductive material.
Dependencies are inferred from the claim text.