# US 2025/0098544 A1 · Manufacturing apparatus and memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0098544 A1 - Document ID: US20250098544A1 - Status: Published application - Kind: A1 - Application number: 18/829,993 - Filed: 2024-09-10 - Published: 2025-03-20 - Earliest claimed: 2023-09-20 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Takuya SHIMANO; Kenichi YOSHINO; Naoki AKIYAMA - Web page: https://patentgrep.com/patent/US20250098544A1 ## CPC - H10N 50/01: Manufacture or treatment - H10B 61/10: {comprising components having two electrodes, e.g. diodes or MIM elements} - H10N 50/10: Magnetoresistive devices - H10N 50/80: Constructional details - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10B: ELECTRONIC MEMORY DEVICES ## Abstract According to one embodiment, a manufacturing apparatus includes: a wafer holding unit configured to hold a wafer; an ion source configured to output an ion beam; a shutter holding unit configured to hold a shutter and place the shutter between the wafer holding unit and the ion source in a case of preventing irradiation of the wafer with the ion beam; and a target holding unit configured to hold a target including a through hole, and place the target between the wafer holding unit and the ion source in a case of forming, on the wafer, a first layer including a member of the target. ## Claims ### Claim 1 A manufacturing apparatus comprising: a wafer holding unit configured to hold a wafer; an ion source configured to output an ion beam; a shutter holding unit configured to hold a shutter and place the shutter between the wafer holding unit and the ion source in a case of preventing irradiation of the wafer with the ion beam; and a target holding unit configured to hold a target including a through hole, and place the target between the wafer holding unit and the ion source in a case of forming, on the wafer, a first layer including a member of the target. ### Claim 2 (depends on 1) The manufacturing apparatus according to claim 1, further comprising: a control mechanism connected to the shutter holding unit and the target holding unit and configured to move the shutter holding unit and the target holding unit to control a position of the shutter and a position of the target. ### Claim 3 (depends on 1) The manufacturing apparatus according to claim 1, wherein the target includes a high melting point metal element. ### Claim 4 (depends on 1) The manufacturing apparatus according to claim 1, wherein the target includes at least one of titanium (Ti), tantalum (Ta), tungsten (W), titanium nitride (TiN), tantalum nitride (TaN), and tungsten nitride (WN). ### Claim 5 (depends on 1) The manufacturing apparatus according to claim 1, wherein the member of the wafer is etched by the ion beam. ### Claim 6 (depends on 1) The manufacturing apparatus according to claim 1, wherein the first layer is formed on the wafer by sputtering the target with the ion beam that irradiates the through hole. ### Claim 7 (depends on 6) The manufacturing apparatus according to claim 6, wherein a second layer on the wafer is etched by the ion beam that has passed through the through hole. ### Claim 8 (depends on 7) The manufacturing apparatus according to claim 7, wherein the first layer includes at least one of titanium (Ti), tantalum (Ta), tungsten (W), titanium nitride (TiN), tantalum nitride (TaN), and tungsten nitride (WN), and the second layer includes at least one of carbon (C) and carbon nitride (CN). ### Claim 9 (depends on 1) The manufacturing apparatus according to claim 1, wherein the wafer including a first member of a first element and a second member formed on the first member is disposed on the wafer holding unit, the second member is etched by a first ion beam, the target is placed between the wafer and the ion source, the target is irradiated with a second ion beam, and a first layer including a member of the target is formed in the second member or on the second member, the wafer on which a third member of a second element is formed above the second member after formation of the first layer is disposed on the wafer holding unit, and the first member, the second member, the first layer, and the third member are etched by a third ion beam to form a memory cell including the first element and the second element. ### Claim 10 (depends on 9) The manufacturing apparatus according to claim 9, wherein the second member includes one of carbon and carbon nitride, and the first layer includes a high melting point metal element. ### Claim 11 (depends on 10) The manufacturing apparatus according to claim 10, wherein the first layer includes at least one of titanium (Ti), tantalum (Ta), tungsten (W), titanium nitride (TiN), tantalum nitride (TaN), and tungsten nitride (WN). ### Claim 12 A manufacturing apparatus comprising: a wafer holding unit configured to hold a wafer; a wafer clamp unit configured to fix the wafer on the wafer holding unit and including a high melting point metal element; and an ion source configured to output an ion beam, wherein in a case of etching a member on the wafer, the wafer is irradiated with the ion beam, and in a case of forming a first layer including the high melting point metal element on the wafer, the wafer clamp unit is irradiated with the ion beam. ### Claim 13 (depends on 12) The manufacturing apparatus according to claim 12, further comprising: a shutter holding unit configured to hold a shutter and place the shutter between the wafer holding unit and the ion source in a case of preventing irradiation of the wafer with the ion beam; and a control mechanism connected to the shutter holding unit and configured to move the shutter holding unit to control a position of the shutter. ### Claim 14 (depends on 12) The manufacturing apparatus according to claim 12, wherein the wafer clamp unit includes at least one of titanium (Ti), tantalum (Ta), tungsten (W), titanium nitride (TiN), tantalum nitride (TaN), and tungsten nitride (WN). ### Claim 15 (depends on 12) The manufacturing apparatus according to claim 12, wherein the wafer including a first member of a first element and a second member formed on the first member is disposed on the wafer holding unit, the wafer clamp unit is irradiated with the ion beam, and the first layer is formed in the second member or on the second member with a sputtered member of the wafer clamp unit, the wafer on which a third member of a second element is formed on the second member after formation of the first layer is disposed on the wafer holding unit, and the first member, the second member, the first layer, and the third member are etched by the ion beam to form a memory cell including the first element and the second element. ### Claim 16 (depends on 15) The manufacturing apparatus according to claim 15, wherein the second member includes one of carbon and carbon nitride, and the first layer includes at least one of titanium (Ti), tantalum (Ta), tungsten (W), titanium nitride (TiN), tantalum nitride (TaN), and tungsten nitride (WN). ### Claim 17 A memory device comprising: a memory element; a switching element; and an electrode between the memory element and the switching element, wherein the electrode includes: a first conductor including one of carbon (C) and carbon nitride (CN); and a second conductor including a high melting point metal element, and the second conductor is in direct contact with the memory element. ### Claim 18 (depends on 17) The memory device according to claim 17, wherein the second conductor includes at least one of titanium (Ti), tantalum (Ta), tungsten (W), titanium nitride (TiN), tantalum nitride (TaN), and tungsten nitride (WN). ### Claim 19 (depends on 17) The memory device according to claim 17, wherein the memory element is a magnetoresistive effect element.