Piezoelectric laminate and piezoelectric element
AssigneeFUJIFILM Corporation
InventorsHiroyuki KOBAYASHI, Seigo NAKAMURA
Life of this patent
Estimating the term…
Loading patent…
AssigneeFUJIFILM Corporation
InventorsHiroyuki KOBAYASHI, Seigo NAKAMURA
Estimating the term…
A piezoelectric laminate comprise: a substrate; and a lower electrode layer, a seed layer, and a piezoelectric film, in which the piezoelectric film contains, as a main component, a first perovskite-type oxide containing Pb, Zr, Ti, and Nb, the seed layer contains, as a main component, a second perovskite-type oxide that is lattice-matched with the first perovskite-type oxide, and in a crystal grain size distribution acquired by an electron back scattered diffraction method, a proportion of crystal grains having a grain size of 100 nm or less is 15% or less in the piezoelectric film, and, the piezoelectric film satisfies the following expressions: |Ec++Ec− |<|Ec+−Ec−|, 55 kV/cm≤Ec+≤75 kV/cm, and 75 kV/cm≤Ec+−Ec−≤100 kV/cm, wherein Ec+ is a positive-side coercive electric field and Ec− is a negative-side coercive electric field in polarization-electric field characteristics.
A piezoelectric laminate comprising:
Dependencies are inferred from the claim text.