# US 2025/0098515 A1 · Method of forming semiconductor device having carbon nanotube

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2025/0098515 A1
- Document ID: US20250098515A1
- Status: Published application
- Kind: A1
- Application number: 18/965,213
- Filed: 2024-12-02
- Published: 2025-03-20
- Earliest claimed: 2019-04-18
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Martin Christopher HOLLAND; Timothy VASEN; Blandine DURIEZ
- Web page: https://patentgrep.com/patent/US20250098515A1

## CPC

- D01F 9/127: by thermal decomposition of hydrocarbon gases or vapours {or other carbon-containing compounds in the form of gas or vapour, e.g. carbon monoxide, alcohols}
- H10K 85/221: {Carbon nanotubes}
- C23C 16/0281: {of metallic sub-layers (C23C16/029 takes precedence)}
- C23C 16/047: {using irradiation by energy or particles}
- C23C 16/06: characterised by the deposition of metallic material
- C23C 16/26: Deposition of carbon only
- C23C 16/4418: {Methods for making free-standing articles (C23C16/01 takes precedence)}
- C23C 16/487: {using electron radiation}
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- C30B 25/02: Epitaxial-layer growth
- C30B 25/10: Heating of the reaction chamber or the substrate
- C30B 29/02: Elements
- C30B 29/60: characterised by shape
- H10K 10/481: {characterised by the gate conductors}
- H10K 10/491: {Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]}
- H10K 71/30: Doping active layers, e.g. electron transporting layers
- H10K 10/484: {characterised by the channel regions}
- H10K 10/84: Ohmic electrodes, e.g. source or drain electrodes
- H10K 71/10: Deposition of organic active material
- D01F: CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A method includes placing a first charged metal dot on a first position of a surface of a semiconductor substrate. A first charged region is formed on a second position of the surface of the semiconductor substrate. A precursor gas is flowed along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate. A dielectric layer is deposited to cover the first CNT and the semiconductor substrate. A second charged metal dot is placed on a third position of a surface of the dielectric layer. A second charged region is formed on a fourth position of the surface of the dielectric layer. The precursor gas is flowed along a second direction from the third position toward the fourth position on the semiconductor substrate, thereby forming a second CNT on the first CNT.

## Claims

### Claim 1

A method, comprising:
placing a first charged metal dot on a first position of a surface of a semiconductor substrate;
forming a first charged region on a second position of the surface of the semiconductor substrate, wherein the first position is spaced apart from the second position;
flowing a precursor gas along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate;
depositing a dielectric layer to cover the first CNT and the semiconductor substrate;
placing a second charged metal dot on a third position of a surface of the dielectric layer;
forming a second charged region on a fourth position of the surface of the dielectric layer, wherein the third position is spaced apart from the fourth position; and
flowing the precursor gas along a second direction from the third position toward the fourth position on the semiconductor substrate, thereby forming a second carbon nanotube (CNT) on the first CNT.

### Claim 2 (depends on 1)

The method of claim 1, wherein the second direction is the same as the first direction.

### Claim 3 (depends on 1)

The method of claim 1, wherein the second direction is different from the first direction.

### Claim 4 (depends on 1)

The method of claim 1, wherein the second CNT has an extending direction perpendicular to an extending direction of the first CNT.

### Claim 5 (depends on 1)

The method of claim 1, wherein the second CNT has an extending direction parallel to an extending direction of the first CNT.

### Claim 6 (depends on 1)

The method of claim 1, wherein the second CNT overlaps the first CNT along a vertical direction perpendicular to the surface of the semiconductor substrate.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
forming a gate dielectric layer around the first CNT; and
forming a gate electrode layer on the gate dielectric layer.

### Claim 8 (depends on 7)

The method of claim 7, wherein forming the gate dielectric layer around the first CNT comprises forming the gate dielectric layer completely around the first CNT.

### Claim 9

A method, comprising:
placing a first charged metal dot on a first position of a surface of a semiconductor substrate;
forming a first charged region on a second position of the surface of the semiconductor substrate, wherein the first position is spaced apart from the second position;
flowing a precursor gas along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first portion of a carbon nanotube (CNT) on the semiconductor substrate;
forming a second charged region on a third position of the surface of the semiconductor substrate, wherein the third position is between the first position and the second position; and
flowing the precursor gas along a second direction across the first direction toward the third position on the semiconductor substrate, thereby forming a second portion of the CNT.

### Claim 10 (depends on 9)

The method of claim 9, wherein the second direction is perpendicular to the first direction.

### Claim 11 (depends on 9)

The method of claim 9, wherein the second charged region has a net charge different from a net charge of the first charged region.

### Claim 12 (depends on 9)

The method of claim 9, wherein the second charged region has a net charge greater than a net charge of the first charged region.

### Claim 13 (depends on 9)

The method of claim 9, wherein forming the first charged region comprises injecting an electron beam onto the second position of the surface of the semiconductor substrate.

### Claim 14 (depends on 9)

The method of claim 9, wherein forming the second charged region comprises injecting an electron beam onto the third position of the surface of the semiconductor substrate.

### Claim 15 (depends on 9)

The method of claim 9, further comprising:
flowing a hydrogen gas during flowing the precursor gas along the first direction from the first position toward the second position on the semiconductor substrate.

### Claim 16 (depends on 9)

The method of claim 9, further comprising:
flowing a hydrogen gas during flowing the precursor gas along the second direction across the first direction toward the third position on the semiconductor substrate.

### Claim 17 (depends on 9)

The method of claim 9, wherein the second portion of the CNT is in contact with an end of the first portion of the CNT.

### Claim 18

A method, comprising:
placing a first charged metal dot on a first position of a surface of a semiconductor substrate;
forming a first charged region on a second position of the surface of the semiconductor substrate, wherein the first position is spaced apart from the second position;
flowing a first precursor gas along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate;
forming a dielectric layer over the first CNT; and
growing a second carbon nanotube (CNT) over the dielectric layer, wherein the second CNT extends across the first CNT.

### Claim 19 (depends on 18)

The method of claim 18, wherein growing the second CNT over the dielectric layer comprises:
flowing a second precursor gas along a second direction perpendicular to an extending direction of the first CNT.

### Claim 20 (depends on 18)

The method of claim 18, wherein growing the second CNT over the dielectric layer comprises:
applying an electric field not parallel to an extending direction of the first CNT.