# US 2025/0098402 A1 · Light-Emitting Device, Manufacturing Method Therefor, Display Panel and Display Apparatus

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- Number: US 2025/0098402 A1
- Document ID: US20250098402A1
- Status: Published application
- Kind: A1
- Application number: 18/729,327
- Filed: 2022-08-29
- Published: 2025-03-20
- Earliest claimed: 2022-08-29
- Assignees: Beijing BOE Technology Development Co., Ltd.; Boe Technology Gruop Co., Ltd.
- Applicants: Beijing Boe Technology Development Co., Ltd.; Boe Technology Gruop Co., Ltd.
- Inventors: Xiaoyuan Zhang
- Web page: https://patentgrep.com/patent/US20250098402A1

## CPC

- H10K 50/166: {comprising a multilayered structure}
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 50/15: Hole transporting layers
- H10K 50/157: {between the light-emitting layer and the cathode}
- H10K 50/16: Electron transporting layers
- H10K 50/165: comprising dopants
- H10K 50/17: Carrier injection layers
- H10K 71/164: {using vacuum deposition}
- H10K 2101/30: Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
- H10K 2101/40: Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
- H10K 2102/351: {Thickness}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A light-emitting device is provided. The light-emitting device includes a first electrode, an electron transport adjustment layer, a quantum dot light-emitting layer and a second electrode that are arranged in sequence. The electron transport adjustment layer is configured to adjust a number of electrons transported from the first electrode to the quantum dot light-emitting layer.

## Claims

### Claim 1

A light-emitting device, comprising:
a first electrode, an electron transport adjustment layer, a quantum dot light-emitting layer and a second electrode that are arranged in sequence, wherein
the electron transport adjustment layer is configured to adjust a number of electrons transported from the first electrode to the quantum dot light-emitting layer.

### Claim 2 (depends on 1)

The light-emitting device according to claim 1, wherein the electron transport adjustment layer includes:
an electron transport layer located between the first electrode and the quantum dot light-emitting layer; and
an electron adjustment layer located between the electron transport layer and the first electrode, wherein
a work function of the electron adjustment layer is greater than a work function of the electron transport layer, and the work function of the electron adjustment layer is greater than a work function of the first electrode; and
the electron adjustment layer is configured to reduce the number of electrons transported from the first electrode to the quantum dot light-emitting layer.

### Claim 3 (depends on 2)

The light-emitting device according to claim 2, wherein
the electron adjustment layer and the electron transport layer together include at least three elements, and the electron adjustment layer and the electron transport layer include at least one same element.

### Claim 4 (depends on 2)

The light-emitting device according to claim 2, wherein the work function of the electron adjustment layer is E eV, and a thickness of the electron adjustment layer is D nm, wherein E and D satisfy:
1
<
E
D
<
23.33
.

### Claim 5 (depends on 2)

The light-emitting device according to claim 2, wherein the work function of the electron adjustment layer is in a range of 5 eV to 7 eV, inclusive.

### Claim 6 (depends on 2)

The light-emitting device according to claim 2, wherein an energy level of a highest occupied molecular orbital of the electron adjustment layer is in a range of −7 eV to −10 eV, inclusive; and
an energy level of a lowest unoccupied molecular orbital of the electron adjustment layer is in a range of −4.2 eV to −6 eV, inclusive.

### Claim 7 (depends on 2)

The light-emitting device according to an claim 2, wherein a material of the electron adjustment layer includes an oxide of a metal of a fifth sub-group or an oxide of a metal of a sixth sub-group; and/or
a material of the electron adjustment layer includes at least one of MoO3, WO3, V2O3 or CrO3; and a material of the electron transport layer at least one of ZnO, ZnS, ZnSe, ZnMgO, NiO, CdS, CdSe of CdO.

### Claim 8

(canceled)

### Claim 9 (depends on 2)

The light-emitting device according to claim 2, wherein an energy level of a lowest unoccupied molecular orbital of the electron transport adjustment layer is less than an energy level of a lowest unoccupied molecular orbital of the electron transport layer.

### Claim 10 (depends on 2)

The light-emitting device according to claim 2, wherein a roughness of a surface of the electron adjustment layer away from the electron transport layer is less than a roughness of a surface of the electron transport layer away from the electron adjustment layer.

### Claim 11 (depends on 1)

The light-emitting device according to claim 1, wherein the electron transport layer includes:
an electron transport layer located between the first electrode and the quantum dot light-emitting layer; and
an electron adjustment layer located between the electron transport layer and the first electrode, wherein
a work function of the electron adjustment layer is less than a work function of the electron transport layer, and the work function of the electron adjustment layer is less than a work function of the first electrode; and
the electron adjustment layer is configured to increase the number of electrons transported from the first electrode to the quantum dot light-emitting layer.

### Claim 12 (depends on 11)

The light-emitting device according to claim 11, wherein a material of the electron adjustment layer includes Cs2O3.

### Claim 13

(canceled)

### Claim 14 (depends on 1)

The light-emitting device according to claim 1, wherein
the electron transport adjustment layer includes a dopant material and a host material; and
the dopant material is configured to adjust the number of electrons transported from the first electrode to the quantum dot light-emitting layer.

### Claim 15 (depends on 14)

The light-emitting device according to claim 14,
wherein the electron transport adjustment layer includes at least three elements, and the dopant material and the host material include at least one element same element; and/or
a work function of the dopant material is greater than a work function of the host material, and the work function of the dopant material is greater than a work function of the first electrode; and the dopant material is configured to reduce the number of electrons transported from the first electrode to the quantum dot light-emitting layer.

### Claim 16

(canceled)

### Claim 17 (depends on 14)

The light-emitting device according to claim 14, the dopant material includes a P-type dopant material.

### Claim 18

(canceled)

### Claim 19 (depends on 1)

The light-emitting device according to claim 1, further comprising:
a hole transport layer, located between the second electrode and the quantum dot light-emitting layer; and
a hole injection layer, located between the second electrode and the hole transport layer.

### Claim 20

A method for manufacturing a light-emitting device,
the method comprising:
forming an electron transport adjustment layer on a side of a first electrode, forming a quantum dot light-emitting layer on a side of the electron transport adjustment layer away from the first electrode, and
forming a second electrode on a side of the quantum dot light-emitting layer away from the electron transport adjustment layer;
or
forming the quantum dot light-emitting layer on a side of the second electrode,
forming the electron transport adjustment layer on a side of the quantum dot light-emitting layer away from the second electrode, and
forming the first electrode on a side of the electron transport adjustment layer away from the quantum dot light-emitting layer;
wherein the electron transport adjustment layer is configured to adjust a number of electrons transported from the first electrode to the quantum dot light-emitting layer.

### Claim 21 (depends on 20)

The method according to claim 20, wherein forming the electron transport adjustment layer on the side of the first electrode includes:
forming an electron adjustment layer by evaporation; and
forming an electron transport layer on a side of the electron adjustment layer away from the first electrode;
or
forming the electron transport adjustment layer on the side of the quantum dot light, emitting layer away from the second electrode includes:
forming the electron transport layer on the side of the quantum dot light-emitting layer away from the second electrode, and
forming the electron adjustment layer on a side of the electron transport layer away from the quantum dot light-emitting layer by evaporation.

### Claim 22 (depends on 20)

The method according to claim 20, wherein forming the electron transport adjustment layer on the side of the first electrode includes:
forming the electron transport adjustment layer on the side of the first electrode by a solution process;
or
forming the electron transport adjustment layer on the side of the quantum dot light-emitting layer away from the second electrode includes:
forming the electron transport adjustment layer on the side of the quantum dot light-emitting layer away from the second electrode by a solution process,
wherein the electron transport adjustment layer includes a dopant material and a host material, and the dopant material is configured to adjust the number of electrons transported from the first electrode to the quantum dot light-emitting layer.

### Claim 23 (depends on 1)

A display panel, comprising:
a backplane; and
a plurality of light-emitting devices each according to claim 1, the plurality of light-emitting devices being disposed on a side of the backplane.

### Claim 24

(canceled)

### Claim 25 (depends on 23)

A display apparatus, comprising the display panel according to claim 23.