# US 2025/0098374 A1 · Light emitting element

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- Number: US 2025/0098374 A1
- Document ID: US20250098374A1
- Status: Published application
- Kind: A1
- Application number: 18/827,150
- Filed: 2024-09-06
- Published: 2025-03-20
- Earliest claimed: 2023-09-19
- Assignees: Nichia Corporation
- Applicants: Nichia Corporation
- Inventors: Akira FUJIOKA
- Web page: https://patentgrep.com/patent/US20250098374A1

## CPC

- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/835: {Reflective materials}
- H10H 29/24: comprising multiple light-emitting semiconductor devices
- H10W 90/00: Package configurations
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light emitting element includes: a semiconductor structure including: a first semiconductor layer that has: a first face that has a peripheral region, and a central region surrounded by the peripheral region in a plan view, wherein a surface roughness of the central region is higher than a surface roughness of the peripheral region, and a second face that opposes the first face and has a first region and a second region, an active layer disposed on the first region, and a second semiconductor layer disposed on the active layer; a first electrode disposed on the second region and electrically connected to the first semiconductor layer; a second electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer; a first reflecting film disposed only on the peripheral region among the surfaces of the semiconductor structure; and a first protective film disposed on the central region.

## Claims

### Claim 1

A light emitting element comprising:
a semiconductor structure comprising:
a first semiconductor layer that has:
a first face that has a peripheral region, and a central region surrounded by the peripheral region in a plan view, wherein a surface roughness of the central region is higher than a surface roughness of the peripheral region, and
a second face that opposes the first face and has a first region and a second region,
an active layer disposed on the first region, and
a second semiconductor layer disposed on the active layer;
a first electrode disposed on the second region and electrically connected to the first semiconductor layer;
a second electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer;
a first reflecting film disposed only on the peripheral region of the first face among the surfaces of the semiconductor structure; and
a first protective film disposed on the central region, wherein a light transmittance of the first protective film for a peak wavelength of the light emitted by the active layer is higher than a light transmittance of the first reflecting film for the peak wavelength of the light emitted by the active layer.

### Claim 2 (depends on 1)

The light emitting element according to claim 1, wherein the first reflecting film has a first portion that overlaps the peripheral region in a plan view, and a second portion that extends from the first portion outward from the semiconductor structure in the plan view.

### Claim 3 (depends on 2)

The light emitting element according to claim 2, wherein an area of the second portion is smaller than an area of the first portion in a plan view.

### Claim 4 (depends on 1)

The light emitting element according to claim 1, further comprising:
a second protective film disposed on the lateral faces of the semiconductor structure that connect the first face and the upper face of the second semiconductor layer; wherein:
in a plan view, a perimeter of the second protective film coincides with or is positioned inward of a perimeter of the first reflecting film.

### Claim 5 (depends on 2)

The light emitting element according to claim 2, further comprising:
a second protective film disposed on the lateral faces of the semiconductor structure that connect the first face and the upper face of the second semiconductor layer; wherein:
in a plan view, a perimeter of the second protective film coincides with or is positioned inward of a perimeter of the first reflecting film.

### Claim 6 (depends on 3)

The light emitting element according to claim 3, further comprising:
a second protective film disposed on the lateral faces of the semiconductor structure that connect the first face and the upper face of the second semiconductor layer; wherein:
in a plan view, a perimeter of the second protective film coincides with or is positioned inward of a perimeter of the first reflecting film.

### Claim 7 (depends on 1)

The light emitting element according to claim 1, wherein:
the first reflecting film comprises a first dielectric multilayer film comprising a plurality of first films and a plurality of second films.

### Claim 8 (depends on 2)

The light emitting element according to claim 2, wherein:
the first reflecting film comprises a first dielectric multilayer film comprising a plurality of first films and a plurality of second films.

### Claim 9 (depends on 3)

The light emitting element according to claim 3, wherein:
the first reflecting film comprises a first dielectric multilayer film comprising a plurality of first films and a plurality of second films.

### Claim 10 (depends on 7)

The light emitting element according to claim 7, further comprising:
a second reflecting film that covers the second semiconductor layer; wherein:
the second reflecting film comprises a second dielectric multilayer film comprising a plurality of third films and a plurality of fourth films;
a thickness of each of the first films is larger than a thickness of each of the third films; and
a thickness of each of the second films is larger than a thickness of each of the fourth films.

### Claim 11 (depends on 8)

The light emitting element according to claim 8 further comprising:
a second reflecting film that covers the second semiconductor layer; wherein:
the second reflecting film comprises a second dielectric multilayer film comprising a plurality of third films and a plurality of fourth films;
a thickness of each of the first films is larger than a thickness of each of the third films; and
a thickness of each of the second films is larger than a thickness of each of the fourth films.

### Claim 12 (depends on 9)

The light emitting element according to claim 9 further comprising:
a second reflecting film that covers the second semiconductor layer; wherein:
the second reflecting film comprises a second dielectric multilayer film comprising a plurality of third films and a plurality of fourth films;
a thickness of each of the first films is larger than a thickness of each of the third films; and
a thickness of each of the second films is larger than a thickness of each of the fourth films.

### Claim 13 (depends on 1)

The light emitting element according to claim 1, wherein:
the first protective film is continuously disposed on the central region and the first reflecting film on the peripheral region; and
a surface of the first protective film on the central region is rougher than a surface of the first protective film on the first reflecting film.

### Claim 14 (depends on 2)

The light emitting element according to claim 2, wherein:
the first protective film is continuously disposed on the central region and the first reflecting film on the peripheral region; and
a surface of the first protective film on the central region is rougher than a surface of the first protective film on the first reflecting film.

### Claim 15 (depends on 3)

The light emitting element according to claim 3, wherein:
the first protective film is continuously disposed on the central region and the first reflecting film on the peripheral region; and
a surface of the first protective film on the central region is rougher than a surface of the first protective film on the first reflecting film.

### Claim 16 (depends on 1)

The light emitting element according to claim 1 further comprising:
a second reflecting film that covers the second semiconductor layer and overlaps the first reflecting film in a plan view; wherein:
an overlapping area of the first reflecting film and the second reflecting film is 40% of the area of the first reflecting film or larger.

### Claim 17 (depends on 2)

The light emitting element according to claim 2 further comprising:
a second reflecting film that covers the second semiconductor layer and overlaps the first reflecting film in a plan view; wherein:
an overlapping area of the first reflecting film and the second reflecting film is 40% of the area of the first reflecting film or larger.

### Claim 18 (depends on 3)

The light emitting element according to claim 3 further comprising:
a second reflecting film that covers the second semiconductor layer and overlaps the first reflecting film in a plan view; wherein:
an overlapping area of the first reflecting film and the second reflecting film is 40% of the area of the first reflecting film or larger.