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US 2025/0098363 A1Published application
Copper, indium, gallium, selenium (cigs) films with improved quantum efficiency
AssigneeApplied Materials, Inc.
InventorsPhilip Hsin-hua Li, Seshadri Ramaswami
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Abstract
A device includes a bottom contact layer on a substrate, an absorber layer on the bottom contact layer, a cap layer on the absorber layer, a hole blocker layer on the cap layer, and a top contact layer on the hole blocker layer. The absorber layer includes oxygen-annealed copper, indium, gallium and selenium. The device has a quantum efficiency greater than about 50%, measured at a voltage of about −1 volt and at a wavelength of about 940 nanometers.
Claims20
A device comprising:
- a substrate;
- a bottom contact layer on the substrate;
- an absorber layer on the bottom contact layer, wherein the absorber layer comprises oxygen-annealed copper, indium, gallium and selenium;
- a cap layer on the absorber layer;
- a hole blocker layer on the cap layer;
- and
- a top contact layer on the hole blocker layer;
- wherein the device has a quantum efficiency greater than about 50%, measured at a voltage of about −1 volt and at a wavelength of about 940 nanometers.
5 more elements
An image sensor comprising:
- an absorber layer comprising oxygen-annealed copper, indium, gallium and selenium;
- a cap layer on the absorber layer;
- and
- a hole blocker layer on the cap layer;
- wherein the image sensor has a quantum efficiency greater than about 50%, measured at a voltage of about −1 volt and at a wavelength of about 940 nanometers.
2 more elements
A device comprising:
- a substrate of an image sensor;
- a bottom contact layer on the substrate;
- an absorber layer on the bottom contact layer, wherein the absorber layer comprises oxygen-annealed copper, indium, gallium and selenium;
- a cap layer on the absorber layer, wherein the cap layer comprises at least one of:
- tin-doped gallium oxide, zinc sulfide, cadmium sulfide, cadmium selenide, zinc oxide, zinc selenide, zinc indium selenide, copper gallium selenide, indium selenide, magnesium oxide, or zinc magnesium oxide;
- a hole blocker layer on the cap layer, wherein the hole blocker layer comprises gallium oxide;
- and
- a top contact layer on the hole blocker layer;
- wherein the top contact layer comprises at least one of:
- indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, aluminum-gallium-zinc-oxide, or boron-doped zinc oxide;
- and
- wherein the image sensor has a quantum efficiency greater than about 50%, measured at a voltage of about −1 volt and at a wavelength of about 940 nanometers.
9 more elements
Dependencies are inferred from the claim text.