# US 2025/0098342 A1 · Convex photodiode imaging array

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- Number: US 2025/0098342 A1
- Document ID: US20250098342A1
- Status: Published application
- Kind: A1
- Application number: 18/830,671
- Filed: 2024-09-11
- Published: 2025-03-20
- Earliest claimed: 2023-09-14
- Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Applicants: Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Inventors: Johan ROTHMAN
- Web page: https://patentgrep.com/patent/US20250098342A1

## CPC

- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/8027: {Geometry of the photosensitive area}
- H10F 39/026: {Wafer-level processing}
- H10F 39/80: {Constructional details of image sensors}
- H10F 39/8033: {Photosensitive area}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An array of at least two photodiodes, wherein each photodiode includes an absorption region and a capture region, the capture region including an electrically conductive pad, the absorption region being in contact with the capture region, the absorption region being configured to absorb an incident radiation on the photodiode and to enable a diffusion of charge carriers, in which each absorption region is separated from the other absorption regions, and wherein the absorption region of each photodiode has a convex shape towards the incident radiation.

## Claims

### Claim 1

An array of at least two photodiodes, wherein each photodiode comprises an absorption region and a capture region, the capture region comprising an electrically conductive pad, the absorption region being in contact with the capture region, the absorption region being configured to absorb an incident radiation on the photodiode and to enable a diffusion of charge carriers, and wherein each absorption region is separated from the other absorption regions, wherein the absorption region of each photodiode has a convex shape towards the incident radiation.

### Claim 2 (depends on 1)

The array according to claim 1, wherein each photodiode further comprises a coverage region based on a first semiconductor, the coverage region covering an upper face of the absorption region facing the incident radiation, the coverage region having a first bandgap energy E10.

### Claim 3 (depends on 2)

The array according to claim 2, wherein the first bandgap energy E10 is greater than 0.41 eV.

### Claim 4 (depends on 2)

The array according to claim 2, wherein the absorption region has a second bandgap energy E20, with E10>E20.

### Claim 5 (depends on 2)

The array according to claim 2, wherein the upper face of the coverage region facing the incident radiation, has a convex surface towards the incident radiation.

### Claim 6 (depends on 1)

The array according to claim 1, wherein the absorption region of each photodiode has a curvilinear convex shape.

### Claim 7 (depends on 6)

The array according to claim 6, wherein the absorption region of each photodiode has a circular arc shape.

### Claim 8 (depends on 1)

The array according to claim 1, wherein the capture region further comprises a collection region located between the absorption region and the electrically conductive pad, the collection region being based on a third semiconductor, the collection region being in contact with the absorption region and with the electrically conductive pad.

### Claim 9 (depends on 1)

The array according to claim 1, comprising a passivation layer in contact with a lower face of the absorption region opposite an upper face of the absorption region facing the incident radiation, the passivation layer having openings, each opening facing the absorption region of a distinct photodiode, the capture region of said photodiode extending into said opening.

### Claim 10 (depends on 1)

The array according to claim 1, wherein the absorption region contains a gap opening zone extending from a lower face of the absorption region opposite an upper face of the absorption region facing the incident radiation, the gap opening zone having a variation of its bandgap energy along a direction, called normal direction, substantially perpendicular to the lower face of the absorption region.

### Claim 11 (depends on 2)

The array according to claim 2, wherein the coverage region and the absorption region are doped, the coverage region having the same doping type as that of the absorption region.

### Claim 12 (depends on 8)

The array according to claim 8, wherein the collection region has a doping type opposite that of the absorption region.

### Claim 13 (depends on 2)

The array according to claim 2, wherein the coverage region and the absorption region are doped, the coverage region having a doping type opposite that of the absorption region.

### Claim 14 (depends on 8)

The array according to claim 8, wherein the collection region and the absorption region have the same doping type.

### Claim 15 (depends on 2)

The array according to claim 2, wherein the coverage regions of at least two of the photodiodes form a continuous layer.

### Claim 16 (depends on 1)

The array according to claim 1, wherein the absorption region has a doping level less than 1016 cm−3.

### Claim 17 (depends on 2)

The array according to claim 2, wherein the coverage region has a doping level greater than 1016 cm−3.

### Claim 18 (depends on 8)

The array according to claim 8, wherein the collection region has a doping level greater than 1016 cm−3.