# US 2025/0098341 A1 · Photoelectric conversion apparatus, photoelectric conversion system, and moving body > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0098341 A1 - Document ID: US20250098341A1 - Status: Published application - Kind: A1 - Application number: 18/822,626 - Filed: 2024-09-03 - Published: 2025-03-20 - Earliest claimed: 2023-09-15 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: HIROSHI SEKINE; KAZUHIRO MORIMOTO; JUNJI IWATA - Web page: https://patentgrep.com/patent/US20250098341A1 ## CPC - H10F 39/026: {Wafer-level processing} - H10F 39/807: {Pixel isolation structures} - H10F 39/811: {Interconnections} - H10W 46/00: Marks applied to devices, e.g. for alignment or identification - H10W 46/503: {Located in scribe lines} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Photoelectric conversion apparatus includes semiconductor layer and wiring structure. The semiconductor layer includes pixel array region of avalanche photodiodes, scribe region, peripheral region arranged between the pixel array region and the scribe region, and isolation portion isolating the peripheral region and the scribe region. The peripheral region includes first and second regions of first conductivity type, and third region of second conductivity type. The scribe region includes fourth region of the first conductivity type. The wiring structure includes conductive path connecting the second region and the fourth region. The wiring structure includes first voltage supply line supplying first voltage to the first region to extract first polarity charge from the peripheral region through the first region, and second voltage supply line supplying second voltage to the third region to extract second polarity charge from the peripheral region through the third region. ## Claims ### Claim 1 A photoelectric conversion apparatus including a semiconductor layer and a wiring structure, wherein the semiconductor layer includes a pixel array region including a plurality of pixels, a scribe region including an outer edge of the semiconductor layer, a peripheral region arranged between the pixel array region and the scribe region, and an isolation portion configured to electrically isolate the peripheral region and the scribe region, each of the plurality of pixels includes an avalanche photodiode, the peripheral region includes a first region of a first conductivity type containing, as a majority carrier, a charge with a first polarity, a second region of the first conductivity type, and a third region of a second conductivity type containing, as a majority carrier, a charge with a second polarity different from the first polarity, the scribe region includes a fourth region of the first conductivity type, the wiring structure includes an electrically conductive path configured to electrically connect the second region and the fourth region, and the wiring structure includes a first voltage supply line configured to supply a first voltage to the first region to extract the charge with the first polarity from the peripheral region through the first region, and a second voltage supply line configured to supply a second voltage to the third region to extract the charge with the second polarity from the peripheral region through the third region. ### Claim 2 (depends on 1) The apparatus according to claim 1, wherein the isolation portion is arranged to surround the peripheral region. ### Claim 3 (depends on 1) The apparatus according to claim 1, wherein the peripheral region includes a semiconductor region electrically isolated from the pixel array region, and the first region, the second region, and the third region are arranged in the semiconductor region. ### Claim 4 (depends on 1) The apparatus according to claim 1, wherein the peripheral region includes a field relaxing region of the first conductivity type arranged to surround the first region. ### Claim 5 (depends on 1) The apparatus according to claim 1, wherein the peripheral region includes a field relaxing region of the first conductivity type arranged to surround the second region. ### Claim 6 (depends on 1) The apparatus according to claim 1, wherein the scribe region includes a field relaxing field of the first conductivity type arranged to surround the fourth region. ### Claim 7 (depends on 1) The apparatus according to claim 1, wherein the semiconductor layer further includes a second peripheral region arranged between the pixel array region and the peripheral region, and a second isolation portion configured to electrically isolate the peripheral region and the second peripheral region. ### Claim 8 (depends on 7) The apparatus according to claim 7, wherein the second isolation portion is arranged to surround the second peripheral region. ### Claim 9 (depends on 7) The apparatus according to claim 7, wherein the second peripheral region includes a fifth region of the first conductivity type, and the wiring structure includes a third voltage supply line configured to supply a third voltage to the fifth region to extract the charge with the first polarity from the second peripheral region through the fifth region. ### Claim 10 (depends on 9) The apparatus according to claim 9, wherein the second peripheral region includes a sixth region of the second conductivity type, and the sixth region is arranged apart from the fifth region, and supplied with the same voltage as a voltage commonly supplied to the avalanche photodiodes of the plurality of pixels. ### Claim 11 (depends on 10) The apparatus according to claim 10, wherein the sixth region is arranged to surround the pixel array region. ### Claim 12 (depends on 9) The apparatus according to claim 9, wherein the second peripheral region includes a field relaxing region of the first conductivity type arranged to surround the fifth region. ### Claim 13 (depends on 12) The apparatus according to claim 12, wherein the peripheral region includes a field relaxing field of the first conductivity type arranged to surround the first region. ### Claim 14 (depends on 12) The apparatus according to claim 12, wherein the peripheral region includes a field relaxing region of the first conductivity type arranged to surround the second region. ### Claim 15 (depends on 14) The apparatus according to claim 14, wherein the scribe region includes a field relaxing region of the first conductivity type arranged to surround the fourth region. ### Claim 16 (depends on 1) The apparatus according to claim 1, wherein the semiconductor layer has a first face and a second face on an opposite side of the first face, the wiring structure is arranged such that the first face is located between the second face and the wiring structure, and a pinning layer is arranged to cover the second face. ### Claim 17 (depends on 16) The apparatus according to claim 16, wherein the pinning layer extends to cover the pixel array region, the peripheral region, and the scribe region. ### Claim 18 (depends on 1) The apparatus according to claim 1, further comprises a microlens array, wherein the semiconductor layer is arranged between the microlens array and the wiring structure. ### Claim 19 (depends on 1) The apparatus according to claim 1, wherein the avalanche photodiode of each of the plurality of pixels includes a first semiconductor region of the first conductivity type and a second semiconductor region of the second conductivity type, and a common voltage is supplied to the second semiconductor regions of the plurality of pixels. ### Claim 20 (depends on 1) A photoelectric conversion system comprising: a photoelectric conversion apparatus defined in claim 1; and a signal processing unit configured to process a signal output from the photoelectric conversion apparatus. ### Claim 21 (depends on 1) A moving body that includes a photoelectric conversion apparatus defined in claim 1, comprising a control unit configured to control movement of the moving body using a signal output by the photoelectric conversion apparatus.