# US 2025/0098334 A1 · Solar cell and photovoltaic module > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0098334 A1 - Document ID: US20250098334A1 - Status: Published application - Kind: A1 - Application number: 18/407,377 - Filed: 2024-01-08 - Published: 2025-03-20 - Earliest claimed: 2023-09-15 - Assignees: Jinko Solar Co., Ltd.; Zhejiang Jinko Solar Co., Ltd. - Applicants: Jinko Solar Co., Ltd.; Zhejiang Jinko Solar Co., Ltd. - Inventors: Yuanfang ZHANG; Menglei XU; Jie YANG; Xinyu ZHANG - Web page: https://patentgrep.com/patent/US20250098334A1 ## CPC - H10F 10/161: comprising multiple PN heterojunctions, e.g. tandem cells - H10F 77/703: {of the semiconductor bodies, e.g. textured active layers} - H10F 10/16: Photovoltaic cells having only PN heterojunction potential barriers - H10F 10/19: Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions - H10F 19/908: {for back-contact photovoltaic cells} - H10F 10/166: the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell includes: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a second doped conductive layer, and one or more electrodes that are stacked in the first direction. The transparent conductive layer is between the thin-film solar cell and the first doped conductive layer, and the one or more electrodes are formed on a side of the second doped conductive layer away from the substrate, the one or more electrodes are in ohmic contact with the second doped conductive layer. The first doped conductive layer includes a doped amorphous silicon layer or a doped microcrystalline silicon layer. ## Claims ### Claim 1 A solar cell, comprising a thin-film solar cell and a bottom cell stacked in a first direction, wherein the bottom cell includes: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, and a second doped conductive layer that are stacked in the first direction, wherein the transparent conductive layer is between the thin-film solar cell and the first doped conductive layer, and the first doped conductive layer includes a doped amorphous silicon layer or a doped microcrystalline silicon layer; and one or more electrodes formed on a side of the second doped conductive layer away from the substrate, wherein the one or more electrodes are in ohmic contact with the second doped conductive layer. ### Claim 2 (depends on 1) The solar cell according to claim 1, wherein a surface of the substrate facing towards the intrinsic amorphous silicon layer has a plurality of textured structures. ### Claim 3 (depends on 2) The solar cell according to claim 2, wherein heights of the plurality of textured structures of the surface of the substrate facing towards the intrinsic amorphous silicon layer in the first direction range from 50 nm to 1 μm. ### Claim 4 (depends on 1) The solar cell according to claim 1, wherein each of the substrate and the first doped conductive layer includes first doped ions, the second doped conductive layer includes second doped ions, and the first doped ions are P-type ions and the second doped ions are N-type ions, or the first doped ions are N-type ions and the second doped ions are P-type ions. ### Claim 5 (depends on 4) The solar cell according to claim 4, wherein doping concentration of the first doped ions in the first doped conductive layer ranges from 1017/cm3 to 1019/cm3. ### Claim 6 (depends on 1) The solar cell according to claim 1, wherein the second doped conductive layer has first doped regions and second doped regions, and the first doped regions interleave with the second doped regions in a second direction; wherein doping concentration of doped ions in the first doped regions is greater than doping concentration of doped ions in the second doped regions; and the one or more electrodes are in ohmic contact with the first doped regions. ### Claim 7 (depends on 6) The solar cell according to claim 6, wherein surfaces of the first doped regions facing towards the one or more electrodes are textured surfaces. ### Claim 8 (depends on 6) The solar cell according to claim 6, wherein one or more orthographic projections of the one or more electrodes on a surface of the second doped conductive layer facing towards the one or more electrodes are located within one or more respective first doped regions of the first doped regions. ### Claim 9 (depends on 1) The solar cell according to claim 1, wherein a thickness of the first doped conductive layer in the first direction ranges from 5 nm to 30 nm. ### Claim 10 (depends on 1) The solar cell according to claim 1, wherein a thickness of the intrinsic amorphous silicon layer in the first direction ranges from 1 nm to 10 nm. ### Claim 11 (depends on 1) The solar cell according to claim 1, wherein the thin-film solar cell includes a perovskite thin-film solar cell, a copper indium gallium diselenide (CIGS) thin-film solar cell, a cadmium telluride thin-film solar cell, or a III to V-group thin-film solar cell. ### Claim 12 A photovoltaic module, comprising: one or more cell strings formed by connecting a plurality of the solar cells; one or more encapsulation layers configured to cover at least one surface of the one or more cell strings; and one or more cover plates configured to cover at least one surface of the one or more encapsulation layers away from the one or more cell strings; wherein each solar cell of the plurality of the solar cells includes a thin-film solar cell and a bottom cell stacked in a first direction, and the bottom cell includes: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, and a second doped conductive layer that are stacked in the first direction, wherein the transparent conductive layer is between the thin-film solar cell and the first doped conductive layer, and the first doped conductive layer includes a doped amorphous silicon layer or a doped microcrystalline silicon layer; and one or more electrodes formed on a side of the second doped conductive layer away from the substrate, wherein the one or more electrodes are in ohmic contact with the second doped conductive layer. ### Claim 13 (depends on 12) The photovoltaic module according to claim 12, wherein a surface of the substrate facing towards the intrinsic amorphous silicon layer has a plurality of textured structures. ### Claim 14 (depends on 13) The photovoltaic module according to claim 13, wherein heights of the plurality of textured structures of the surface of the substrate facing towards the intrinsic amorphous silicon layer in the first direction range from 50 nm to 1 μm. ### Claim 15 (depends on 12) The photovoltaic module according to claim 12, wherein each of the substrate and the first doped conductive layer includes first doped ions, the second doped conductive layer includes second doped ions, and the first doped ions are P-type ions and the second doped ions are N-type ions, or the first doped ions are N-type ions and the second doped ions are P-type ions. ### Claim 16 (depends on 15) The photovoltaic module according to claim 15, wherein doping concentration of the first doped ions in the first doped conductive layer ranges from 1017/cm3 to 1019/cm3. ### Claim 17 (depends on 12) The photovoltaic module according to claim 12, wherein the second doped conductive layer has first doped regions and second doped regions, and the first doped regions interleave with the second doped regions in a second direction; wherein doping concentration of doped ions in the first doped regions is greater than doping concentration of doped ions in the second doped regions; and the one or more electrodes are in ohmic contact with the first doped regions. ### Claim 18 (depends on 17) The photovoltaic module according to claim 17, wherein surfaces of the first doped regions facing towards the one or more electrodes are textured surfaces. ### Claim 19 (depends on 17) The photovoltaic module according to claim 17, wherein one or more orthographic projections of the one or more electrodes on a surface of the second doped conductive layer facing towards the one or more electrodes are located within one or more respective first doped regions of the first doped regions. ### Claim 20 (depends on 12) The photovoltaic module according to claim 12, wherein a thickness of the first doped conductive layer in the first direction ranges from 5 nm to 30 nm.