Wide bandgap semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorKatsunori UENO
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Abstract
Provided is a wide bandgap semiconductor device having a configuration capable of detecting a temperature of a substrate with high accuracy during operation of a main transistor. The wide bandgap semiconductor device includes: a substrate mainly including a wide bandgap semiconductor; a vertical MOSFET serving as a main transistor provided in a first region of the substrate; and a lateral MOSFET for temperature detection provided in a second region of the substrate.
Claims10
A wide bandgap semiconductor device comprising:
- a substrate mainly including a wide bandgap semiconductor;
- a vertical MOSFET serving as a main transistor provided in a first region of the substrate;
- and
- a lateral MOSFET for temperature detection provided in a second region of the substrate.
The wide bandgap semiconductor device of claim 4, wherein:
- the first lateral MOSFET includes a first drain electrode and a first gate electrode;
- the second lateral MOSFET includes a second drain electrode and a second gate electrode;
- the first gate electrode is short-circuited to the first drain electrode;
- and
- the second gate electrode is short-circuited to the second drain electrode.
The wide bandgap semiconductor device of claim 4, wherein:
- the first lateral MOSFET includes a first drain electrode and a first gate electrode;
- the second lateral MOSFET includes a second gate electrode;
- and
- the first gate electrode and the second gate electrode are both short-circuited to the first drain electrode.
Dependencies are inferred from the claim text.