# US 2025/0098263 A1 · Semiconductor device

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- Number: US 2025/0098263 A1
- Document ID: US20250098263A1
- Status: Published application
- Kind: A1
- Application number: 18/589,766
- Filed: 2024-02-28
- Published: 2025-03-20
- Earliest claimed: 2023-09-15
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Tomoaki INOKUCHI; Hiro GANGI; Yusuke KOBAYASHI; Shotaro BABA; Taichi FUKUDA
- Web page: https://patentgrep.com/patent/US20250098263A1

## CPC

- H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates}
- H10D 84/813: {Combinations of field-effect devices and capacitor only}
- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D 64/518: {characterised by their lengths or sectional shapes}
- H10D 64/64: Electrodes comprising a Schottky barrier to a semiconductor
- H10D 84/146: {the built-in components being Schottky barrier diodes}
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10B 63/34: {of the vertical channel field-effect transistor type}
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/841: {Electrodes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A semiconductor device includes a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member being positioned between the first gate electrode and the first semiconductor region, a gate driver supplying the gate voltage to the first gate electrode, and a recording element electrically connected with the gate driver. The recording element records, as continuously changing analog data, a number of times that the gate voltage is supplied to the first gate electrode while being enough to switch the major element on.

## Claims

### Claim 1

A semiconductor device, comprising:
a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member, the first insulating member being positioned between the first gate electrode and the first semiconductor region, a gate voltage of the first gate electrode controlling a current flowing between the first electrode and the second electrode via the first semiconductor region;
a gate driver supplying the gate voltage to the first gate electrode; and
a recording element electrically connected with the gate driver, the recording element recording, as continuously changing analog data, a number of times that the gate voltage is supplied to the first gate electrode while being enough to switch the major element on.

### Claim 2 (depends on 1)

The device according to claim 1, wherein
the recording element includes a capacitor, and
the capacitor is charged with a charge supplied from the gate driver each time the major element is switched on.

### Claim 3 (depends on 1)

The device according to claim 1, wherein
the recording element includes a second semiconductor region, a third electrode, a fourth electrode, a second gate electrode, and a second insulating member, and
the second insulating member is positioned between the second gate electrode and the second semiconductor region.

### Claim 4 (depends on 3)

The device according to claim 3, further comprising:
a support body including a first surface,
the support body supporting the major element and the recording element,
the first and second electrodes of the major element being positioned to be separated from each other in a first direction,
the first direction being along the first surface,
the first semiconductor region of the major element being located between the first electrode and the second electrode in the first direction,
the first semiconductor region of the major element forming a first Schottky junction with the second electrode,
the first gate electrode of the major element facing the first Schottky junction in a second direction,
the second direction being along the first surface and crossing the first direction,
the third and fourth electrodes of the recording element being positioned to be separated from each other in a fourth direction,
the fourth direction being along the first surface,
the second semiconductor region of the recording element being located between the third electrode and the fourth electrode in the fourth direction,
the second semiconductor region of the recording element forming a second Schottky junction with the fourth electrode,
the second gate electrode of the recording element facing the second Schottky junction in a fifth direction,
the fifth direction being along the first surface and crossing the fourth direction.

### Claim 5 (depends on 4)

The device according to claim 4, wherein
the support body includes a substrate, and
the first semiconductor region and the second semiconductor region each are located on the substrate.

### Claim 6 (depends on 5)

The device according to claim 5, wherein
the substrate includes a second surface positioned at a side opposite to the first surface in a third direction crossing the first and second directions, and
the third and fourth electrodes of the recording element are positioned on the first surface.

### Claim 7 (depends on 1)

The device according to claim 1, wherein
the recording element includes a variable resistance layer, and
a resistance of the variable resistance layer changes according to a charge supplied from the gate driver each time the major element is switched on.

### Claim 8 (depends on 6)

The device according to claim 6, further comprising:
a differential circuit connected between the gate driver and the second gate electrode.

### Claim 9 (depends on 8)

The device according to claim 8, further comprising:
an integration circuit connected between the gate driver and the second gate electrode.

### Claim 10 (depends on 9)

The device according to claim 9, further comprising:
a diode connected in series between the gate driver and the second gate electrode.

### Claim 11

A semiconductor device, comprising:
a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member, the first insulating member being positioned between the first gate electrode and the first semiconductor region;
a gate driver connected to the first gate electrode;
a recording element including a second semiconductor region, a third electrode, a fourth electrode, at least a pair of second gate electrodes, and a second insulating member, the second insulating member being positioned between the second gate electrode and the second semiconductor region;
a capacitor;
a diode;
a first resistance; and
a second resistance,
the capacitor, the diode, and the first resistance being connected in series between the gate driver and the second gate electrode,
one end portion of the second resistance being connected to one end of the capacitor.