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AssigneeKioxia Corporation
InventorsMasaya NAKATA, Kota TAKAHASHI, Yusuke MIKI, Takuma DOI, Kazuhiro MATSUO, Akifumi GAWASE, Kenichiro TORATANI
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A semiconductor device manufacturing method of embodiments includes: forming a first conductive film containing indium on a substrate; forming a first insulating film; forming a second conductive film; forming a second insulating film; forming an opening penetrating the second insulating film, the second conductive film, and the first insulating film to reach the first conductive film; forming a third insulating film in the opening so as to be in contact with bottom and side surfaces of the opening; removing the third insulating film at a bottom of the opening to expose the first conductive film at the bottom of the opening; performing a first treatment using a first gas containing silicon or a second treatment using a second gas containing oxygen; and forming a semiconductor film in the opening without exposing the substrate to an atmosphere with a pressure equal to or more than atmospheric pressure.
A semiconductor device manufacturing method, comprising:
A semiconductor manufacturing apparatus, comprising:
A semiconductor manufacturing apparatus, comprising:
Dependencies are inferred from the claim text.