# US 2025/0098247 A1 · Semiconductor storage device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0098247 A1 - Document ID: US20250098247A1 - Status: Published application - Kind: A1 - Application number: 18/883,483 - Filed: 2024-09-12 - Published: 2025-03-20 - Earliest claimed: 2023-09-15 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Tomohiro KOSUGI - Web page: https://patentgrep.com/patent/US20250098247A1 ## CPC - H10D 62/40: Crystalline structures - H10B 43/10: characterised by the top-view layout - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/30: characterised by the memory core region - H10D 62/402: {Amorphous materials} - H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract According to one embodiment, a semiconductor storage device has a laminated body comprising conductive layers alternating with insulating layers in a first direction. A column extends into the laminated body and includes a first polycrystalline semiconductor film extending along the column in the first direction and a first insulating film extending along the column in the first direction. The first insulating film is between the conductive layers and the first polycrystalline semiconductor film. The first polycrystalline semiconductor film includes a first section corresponding in position along the first direction to an uppermost conductive layer among the conductive layers in the laminated body and a second section that is between the first section and a substrate in the first direction. An average grain diameter of the first section is smaller than an average grain diameter of the second section. ## Claims ### Claim 1 A semiconductor storage device, comprising: a laminated body on a substrate, the laminated body comprising conductive layers alternating with insulating layers in a first direction; a column extending into the laminated body in the first direction, the column including: a first polycrystalline semiconductor film extending along the column in the first direction; and a first insulating film extending along the column in the first direction, the first insulating film being between the conductive layers and the first polycrystalline semiconductor film, wherein the first polycrystalline semiconductor film includes: a first section corresponding in position along the first direction to a first conductive layer among the conductive layers in the laminated body that is a farthest layer from the substrate in the first direction; and a second section between the first section and the substrate in first direction, and an average grain diameter of the first section is smaller than an average grain diameter of the second section. ### Claim 2 (depends on 1) The semiconductor storage device of claim 1, wherein a boundary between the first section and the second section is located at a position between a position of an upper surface of the first conductive layer and a position of an upper surface of another one of the conductive layers among the conductive layers in the laminated body. ### Claim 3 (depends on 2) The semiconductor storage device of claim 2, wherein the position of the boundary between the first section and the second section is substantially equal to a position of a lower surface of the first conductive layer. ### Claim 4 (depends on 1) The semiconductor storage device of claim 1, wherein the column further includes: an insulating core extending in first direction, the first polycrystalline semiconductor film being between the insulating core and the conductive layers. ### Claim 5 (depends on 4) The semiconductor storage device of claim 4, further comprising: a second polycrystalline semiconductor film that covers an upper end of the first polycrystalline semiconductor film and an upper end of the insulating core, wherein the second polycrystalline semiconductor film includes a dopant. ### Claim 6 (depends on 5) The semiconductor storage device of claim 5, wherein the dopant is phosphorus. ### Claim 7 (depends on 5) The semiconductor storage device of claim 5, wherein the average grain diameter of the first section is smaller than an average grain diameter of the second polycrystalline semiconductor film. ### Claim 8 (depends on 5) The semiconductor storage device of claim 5, wherein a diffusion distance of the dopant in the first direction from the second polycrystalline semiconductor film is substantially equal to a distance in the first direction from the boundary to an interface that is between the second polycrystalline semiconductor film and the first polycrystalline semiconductor film. ### Claim 9 A semiconductor storage device, comprising: a laminated body on a substrate, the laminated body comprising conductive layers alternating with insulating layers in a first direction; a column extending into the laminated body in the first direction, the column including: a first semiconductor film extending along the column in the first direction; and a first insulating film extending along the column in the first direction, the first insulating film being between the conductive layers and the first semiconductor film, wherein the first semiconductor film includes: a first section corresponding in position along the first direction to a first conductive layer among the conductive layers in the laminated body that is a farthest layer from the substrate in the first direction; and a second section between the first section and the substrate in first direction, and an average grain diameter of the first section is smaller than an average grain diameter of the second section. ### Claim 10 (depends on 9) The semiconductor storage device of claim 9, wherein the first section is polycrystalline semiconductor material, and the second section is polycrystalline semiconductor material. ### Claim 11 (depends on 9) The semiconductor storage device of claim 9, wherein the first section is amorphous semiconductor material, and the second section is polycrystalline semiconductor material. ### Claim 12 (depends on 11) The semiconductor storage device of claim 11, wherein a boundary between the first section and the second section is located at a position between a position of an upper surface of the first conductive layer and a position of an upper surface of another one of the conductive layers among the conductive layers in the laminated body. ### Claim 13 (depends on 12) The semiconductor storage device of claim 12, wherein the position of the boundary between the first section and the second section is substantially equal to a position of a lower surface of the first conductive layer. ### Claim 14 (depends on 11) The semiconductor storage device of claim 11, wherein the column further includes: an insulating core extending in the first direction, the first semiconductor film being between the insulating core and the conductive layers. ### Claim 15 (depends on 14) The semiconductor storage device of claim 14, further comprising: a second semiconductor film that covers an upper end of the first semiconductor film and an upper end of the insulating core, wherein the second semiconductor film includes a dopant. ### Claim 16 (depends on 15) The semiconductor storage device of claim 15, wherein the dopant is phosphorus. ### Claim 17 (depends on 15) The semiconductor storage device of claim 15, wherein the second semiconductor film is polycrystalline. ### Claim 18 (depends on 15) The semiconductor storage device of claim 15, wherein a diffusion distance of the dopant in the laminate first direction from the second semiconductor film is substantially equal to a distance in the first direction from the boundary to an interface that is between the second polycrystalline film and the first semiconductor film. ### Claim 19 A semiconductor storage device, comprising: a laminated body on a substrate, the laminated body comprising conductive layers alternating with insulating layers in a first direction; a plurality of columns extending into the laminated body in the first direction, each column including: a first polycrystalline semiconductor film extending along the column in the first direction; and a first insulating film extending along the column in the first direction, the first insulating film being between the conductive layers and the first polycrystalline semiconductor film, wherein the first polycrystalline semiconductor film includes: a first section corresponding in position along the first direction to a first conductive layer among the conductive layers in the laminated body that is a farthest layer from the substrate in the first direction; and a second section between the first section and the substrate in the first direction, and an average grain diameter of the first section is smaller than an average grain diameter of the second section. ### Claim 20 (depends on 19) The semiconductor storage device of claim 19, wherein a boundary between the first section and the second section is located at a position between a position of an upper surface of the first conductive layer and a position of an upper surface of another one of the conductive layers among the conductive layers in the laminated body.