# US 2025/0098207 A1 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0098207 A1 - Document ID: US20250098207A1 - Status: Published application - Kind: A1 - Application number: 18/591,169 - Filed: 2024-02-29 - Published: 2025-03-20 - Earliest claimed: 2023-09-15 - Assignees: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation - Applicants: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation - Inventors: Tomoaki INOKUCHI; Tatsuo SHIMIZU; Yusuke KOBAYASHI; Shotaro BABA; Hiro GANGI; Hiroki NEMOTO; Taichi FUKUDA; Tatsuya NISHIWAKI - Web page: https://patentgrep.com/patent/US20250098207A1 ## CPC - H10D 30/635: {having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs} - H10D 48/36: Unipolar devices - H10D 62/126: {Top-view geometrical layouts of the regions or the junctions} - H10D 62/165: {Tunnel injectors} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes - H10D 64/647: {Schottky drain or source electrodes for IGFETs} - H10D 48/383: {Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part. ## Claims ### Claim 1 A semiconductor device, comprising: a first conductive part; a second conductive part separated from the first conductive part in a first direction; a third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction; a first insulating part including a first insulating region located between the third conductive part and the portion of the second conductive part; and a semiconductor part of a first conductivity type, the semiconductor part including a first semiconductor region located between the first conductive part and the second conductive part, and a second semiconductor region located between the first insulating region and the portion of the second conductive part, the second semiconductor region having a Schottky junction with the second conductive part, a first impurity being segregated at an interface between the second conductive part and the second semiconductor region, the first conductivity type being an n-type, and the first impurity including at least one selected from the group consisting of arsenic, phosphorus, antimony, and magnesium, or the first conductivity type being a p-type, and the first impurity including at least one selected from the group consisting of boron, indium, aluminum, and beryllium. ### Claim 2 (depends on 1) The device according to claim 1, wherein the second conductive part includes the first impurity. ### Claim 3 (depends on 1) The device according to claim 1, wherein the second semiconductor region includes: a first region; and a second region located between the first region and the first conductive part, a first-conductivity-type impurity concentration in the first region is greater than a first-conductivity-type impurity concentration in the second region, the second conductive part includes: a first conductive region arranged with the first region in the second direction, the first conductive region having a Schottky junction with the first region; and a second conductive region arranged with the second region in the second direction, the second conductive region having a Schottky junction with the second region, and the first impurity is segregated at an interface between the first conductive region and the first region. ### Claim 4 (depends on 3) The device according to claim 3, wherein a second impurity is segregated at an interface between the second conductive region and the second region, and the first conductivity type is the n-type, and the second impurity includes at least one selected from the group consisting of boron, indium, aluminum, and beryllium, or the first conductivity type is the p-type, and the second impurity includes at least one selected from the group consisting of arsenic, phosphorus, antimony, and magnesium. ### Claim 5 (depends on 4) The device according to claim 4, wherein the first impurity is not segregated at an interface between the second conductive region and the second region. ### Claim 6 (depends on 4) The device according to claim 4, wherein the first conductive region includes the first impurity, and the second conductive region includes the second impurity. ### Claim 7 (depends on 1) The device according to claim 1, wherein the second conductive part further includes a third conductive region arranged with the first semiconductor region in the first direction, the third conductive region has a Schottky junction with the first semiconductor region, and the first impurity is segregated at an interface between the third conductive region and the first semiconductor region. ### Claim 8 (depends on 7) The device according to claim 7, wherein the third conductive region includes the first impurity. ### Claim 9 (depends on 4) The device according to claim 4, wherein the first conductive region includes the second impurity. ### Claim 10 (depends on 1) The device according to claim 1, wherein the second conductive part includes platinum. ### Claim 11 (depends on 1) The device according to claim 1, further comprising: a fourth conductive part contacting the second conductive part, the second conductive part being positioned between the semiconductor part and the fourth conductive part, a work function of the second conductive part being greater than a work function of the fourth conductive part. ### Claim 12 (depends on 11) The device according to claim 11, wherein the fourth conductive part includes a conductive upper portion and a conductive lower portion, the third conductive part is positioned between the conductive upper portion and the first conductive part, and the conductive lower portion is positioned between the conductive upper portion and the semiconductor part and arranged with the third conductive part in the second direction. ### Claim 13 (depends on 1) The device according to claim 1, further comprising: a conductive film, the second conductive part including a fourth conductive region, the third conductive part being between the first conductive part and the fourth conductive region, the conductive film being between the fourth conductive region and the third conductive part, the conductive film contacting the fourth conductive region, the first insulating part being between the conductive film and the third conductive part, the first insulating part including a second insulating region contacting the conductive film, the first conductivity type being of the n-type, and the conductive film including at least one selected from the group consisting of titanium, aluminum, tantalum, tungsten, hafnium, vanadium, and polysilicon, or the first conductivity type being of the p-type, and the conductive film including at least one selected from the group consisting of cobalt, nickel, palladium, rhodium, iridium, and polysilicon. ### Claim 14 (depends on 13) The device according to claim 13, wherein a work function of the second conductive part is greater than a work function of the conductive film. ### Claim 15 (depends on 13) The device according to claim 13, wherein the second semiconductor region includes: a first region; and a second region located between the first region and the first conductive part, a first-conductivity-type impurity concentration in the first region is greater than a first-conductivity-type impurity concentration in the second region, and the conductive film contacts the first region. ### Claim 16 (depends on 1) The device according to claim 1, wherein the first semiconductor region includes a counter surface arranged with the third conductive part in the second direction, and the counter surface faces the second conductive part. ### Claim 17 (depends on 1) The device according to claim 1, further comprising: a fifth conductive part, the semiconductor part further including a third semiconductor region located between the first conductive part and the first semiconductor region and arranged with the fifth conductive part in the second direction, the first insulating part including a third insulating region located between the third semiconductor region and the fifth conductive part. ### Claim 18 (depends on 17) The device according to claim 17, wherein the fifth conductive part is electrically connected with the second conductive part, or the fifth conductive part is electrically connectable with the second conductive part.