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US 2025/0098192 A1Published application
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsShigeki SATO, Ryu ARAKI, Hiroshi MIYATA, Soichi YOSHIDA
Life of this patent
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Abstract
A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate that includes a first active section and a second active section;
- a front surface electrode that is provided on a front surface of the semiconductor substrate;
- an anode pad that is provided on the front surface of the semiconductor substrate;
- an anode wiring that is electrically connected to the anode pad, and extends in a first direction in a top plan view;
- a temperature sensing diode that has an anode electrically connected to the anode wiring, and is provided in a wide portion between the first active section and the second active section in a second direction that is orthogonal to the first direction in the top plan view;
- a cathode wiring that is electrically connected to a cathode of the temperature sensing diode, wherein
- the front surface electrode includes
- a main metal portion that is provided on the first active section and the second active section, and
- a connector that is provided between the main metal portion and the cathode wiring, and at least partially overlaps in the top plan view with the wide portion.
6 more elements
A semiconductor device, comprising:
- a semiconductor substrate that includes a first active section and a second active section;
- a front surface electrode that is provided on a front surface of the semiconductor substrate;
- an anode pad that is provided on the front surface of the semiconductor substrate;
- a gate pad that is provided on the front surface of the semiconductor substrate;
- a gate runner that is electrically connected to the gate pad;
- an anode wiring that is electrically connected to the anode pad, and extends in a first direction in a top plan view;
- a temperature sensing diode that has an anode electrically connected to the anode wiring, and is provided in a wide portion between the first active section and the second active section in a second direction that is orthogonal to the first direction in the top plan view;
- a cathode wiring that is electrically connected to a cathode of the temperature sensing diode, wherein
- the front surface electrode includes
- a main metal portion that is provided on the first active section and the second active section, and
- a connector that is provided between the main metal portion and the cathode wiring, wherein
- the temperature sensing diode is sandwiched by the gate runner in the second direction.
9 more elements
A semiconductor device, comprising:
- a semiconductor substrate that includes a first active section and a second active section;
- a front surface electrode that is provided on a front surface of the semiconductor substrate;
- an anode pad that is provided on the front surface of the semiconductor substrate;
- a gate pad that is provided on the front surface of the semiconductor substrate;
- a gate runner that is electrically connected to the gate pad;
- an anode wiring that is electrically connected to the anode pad, and extends in a first direction in a top plan view;
- a temperature sensing diode that has an anode electrically connected to the anode wiring, and is provided in a wide portion between the first active section and the second active section in a second direction that is orthogonal to the first direction in the top plan view;
- a cathode wiring that is electrically connected to a cathode of the temperature sensing diode, wherein
- the front surface electrode includes
- a main metal portion that is provided on the first active section and the second active section, and
- a connector that is provided between the main metal portion and the cathode wiring, wherein
- the connector crosses over the gate runner in the top plan view.
9 more elements
Dependencies are inferred from the claim text.