# US 2025/0098152 A1 · Semiconductor device including air gap protection structure with uneven thickness and manufacturing method thereof

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- Number: US 2025/0098152 A1
- Document ID: US20250098152A1
- Status: Published application
- Kind: A1
- Application number: 18/514,081
- Filed: 2023-11-20
- Published: 2025-03-20
- Earliest claimed: 2023-09-20
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: WEI-CHUAN FANG
- Web page: https://patentgrep.com/patent/US20250098152A1

## CPC

- H10B 12/482: {Bit lines}
- H10B 12/02: {for one transistor one-capacitor [1T-1C] memory cells}
- H10B 12/0335: {Making a connection between the transistor and the capacitor, e.g. plug}
- H10B 12/315: {with the capacitor higher than a bit line}
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, an isolation spacer, a landing pad, and air gap protection structure. The bit line is disposed on the substrate. The isolation spacer is disposed on a side of the bit line. The isolation spacer includes an air gap. The landing pad is disposed over the bit line. The air gap protection structure covers the landing pad and the air gap. The air gap protection structure has an upper portion above a top surface of the landing pad and a lower portion below the upper portion. A ratio between a thickness of the lower portion and a thickness of the upper portion is greater than 0.6 and less than 0.8.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
providing a substrate;
forming a bit line on the substrate;
forming an isolation spacer on a side of the bit line, wherein the isolation spacer comprises an air gap;
forming a landing pad over the bit line; and
performing a deposition process to form an air gap protection structure to cover the landing pad and the air gap, wherein a temperature during the deposition process ranges between about 530° C. and about 570° C.

### Claim 2 (depends on 1)

The method of claim 1, wherein gases used in the deposition process comprise SiH4, NH3, tetramethylsilane, and N2.

### Claim 3 (depends on 2)

The method of claim 2, wherein He is not used during the deposition process.

### Claim 4 (depends on 2)

The method of claim 2, wherein a pressure of the deposition process is less than 3 torr.

### Claim 5 (depends on 2)

The method of claim 2, wherein a flow rate of SiH4 during the deposition process is equal to or greater than 200 sccm.

### Claim 6 (depends on 2)

The method of claim 2, wherein a flow rate of NH3 during the deposition process is equal to or greater than 600 sccm.

### Claim 7 (depends on 2)

The method of claim 2, wherein a flow rate of tetramethylsilane during the deposition process is equal to or greater than 45 sccm.

### Claim 8 (depends on 2)

The method of claim 2, wherein a flow rate of N2 during the deposition process is less than 10000 sccm.

### Claim 9 (depends on 1)

The method of claim 1, wherein a deposition rate of the air gap protection structure is less than 15 Å/sec.

### Claim 10 (depends on 1)

The method of claim 1, wherein the air gap protection structure has an upper portion above a top surface of the landing pad and a lower portion below the upper portion, and a ratio between a thickness of the lower portion and a thickness of the upper portion is equal to or greater than 0.66.