Semiconductor laser and projector
Assigneeams-OSRAM International GmbH
InventorsChristoph EICHLER, Alfred LELL, Sven GERHARD
Life of this patent
Estimating the term…
Abstract
In at least one embodiment, the semiconductor laser includes a semiconductor layer sequence for generating laser radiation and a transparent substrate. The semiconductor layer sequence has a first facet which is designed for emitting the laser radiation, and a second facet opposite the first facet. The substrate has a first lateral surface on the first facet and a second lateral surface on the second facet. The first lateral surface is orientated at least in part obliquely to the first facet and/or the second lateral surface is orientated at least in part obliquely to the second facet.
Claims21
A semiconductor laser (1) comprising:
- a semiconductor layer sequence for generating a laser radiation, and
- a substrate which is transparent to the laser radiation and to which the semiconductor layer sequence is applied,
- wherein
- the semiconductor layer sequence comprises a first facet which is configured for emitting the laser radiation, and a second facet opposite the first facet,
- the substrate comprises a first side surface at the first facet and a second side surface at the second facet,
- the first side surface is oriented at least in places obliquely to the first facet and/or the second side surface is oriented at least in places obliquely to the second facet, and
- an angle between the first side surface and the first facet and/or an angle between the second side surface and the second facet is at least so large that total internal reflection of the laser radiation occurs at the relevant side surface (31,32), so that the laser radiation cannot leave the substrate at the relevant side surface.
(canceled)
A semiconductor laser (1) comprising:
- a semiconductor layer sequence for generating a laser radiation;
- and
- a substrate which is transparent to the laser radiation and to which the semiconductor layer sequence is applied,
- wherein
- the semiconductor layer sequence comprises a first facet which is configured for emitting the laser radiation, and a second facet opposite the first facet,
- a longitudinal resonator axis is delimited by the first and the second facet, the first and the second facet are oriented perpendicular to the longitudinal resonator axis,
- the substrate comprises a first side surface at the first facet and a second side surface at the second facet,
- the first side surface is oriented at least in places obliquely to the first facet and/or the second side surface is oriented at least in places obliquely to the second facet, seen in plan view of a top surface of the substrate, the semiconductor layer sequence is applied on, and
- an angle between the first side surface and the first facet and/or an angle between the second side surface and the second facet is at least so large that total internal reflection of the laser radiation guided along the longitudinal resonator axis occurs at the relevant side surface, so that the laser radiation cannot leave the substrate at the relevant side surface.
Dependencies are inferred from the claim text.