# US 2025/0096173 A1 · Sheet for forming first protective membrane, method for manufacturing semiconductor device, and use of sheet

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- Number: US 2025/0096173 A1
- Document ID: US20250096173A1
- Status: Published application
- Kind: A1
- Application number: 18/727,447
- Filed: 2022-12-20
- Published: 2025-03-20
- Earliest claimed: 2022-01-12
- Assignees: Lintec Corporation
- Applicants: Lintec Corporation
- Inventors: Tomotaka MORISHITA; Keisuke SHINOMIYA
- Web page: https://patentgrep.com/patent/US20250096173A1

## CPC

- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P 72/70: for supporting or gripping
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10W 72/071: {Connecting or disconnecting}
- H10W 74/01: Manufacture or treatment
- H10W 74/10: characterised by their shape or disposition
- H10W 74/40: characterised by their materials
- H10W 72/01208: {using permanent auxiliary members, e.g. using solder flow barriers, spacers or alignment marks}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A first protective membrane forming sheet for forming a first protective membrane on at least a surface of a semiconductor wafer having a bump, the first protective membrane forming sheet including a first base material, a buffer layer, an intermediate release layer, and a first protective membrane forming film stacked in this order in a thickness direction thereof, wherein the intermediate release layer contains an ethylene-vinyl acetate copolymer.

## Claims

### Claim 1

A first protective membrane forming sheet for forming a first protective membrane on at least a surface of a semiconductor wafer having a bump,
the first protective membrane forming sheet comprising a first base material, a buffer layer, an intermediate release layer, and a first protective membrane forming film stacked in this order in a thickness direction thereof,
wherein the intermediate release layer contains an ethylene-vinyl acetate copolymer.

### Claim 2 (depends on 1)

The first protective membrane forming sheet according to claim 1, wherein in the ethylene-vinyl acetate copolymer, a proportion of an amount of a constitutional unit derived from vinyl acetate to a total amount of constitutional units is from 16 to 40 mass %.

### Claim 3 (depends on 1)

The first protective membrane forming sheet according to claim 1, wherein the ethylene-vinyl acetate copolymer has a weight average molecular weight of 200000 or less.

### Claim 4 (depends on 1)

A method for manufacturing a semiconductor device using the first protective membrane forming sheet according to claim 1, the method comprising:
attaching the first protective membrane forming film in the first protective membrane forming sheet to a surface of a semiconductor wafer having a bump such that a top portion of the bump protrudes from the first protective membrane forming film, to provide the first protective membrane forming sheet on the semiconductor wafer;
forming of a first protective membrane by
removing a layer other than the first protective membrane forming film from the first protective membrane forming film in the first protective membrane forming sheet after the attaching of the first protective membrane forming film, and further
in case where the first protective membrane forming film is curable, curing the first protective membrane forming film to form a first protective membrane, or
in case where the first protective membrane forming film is non-curable, handling, as the first protective membrane, the first protective membrane after the layer other than the first protective membrane forming film has been removed to form the first protective membrane on the surface having the bump;
dividing the semiconductor wafer after the forming of the first protective membrane forming to produce a semiconductor chip;
cutting the first protective membrane after the forming of the first protective membrane; and
mounting the semiconductor chip with the first protective membrane to a substrate by flip-chip connecting the semiconductor chip with the first protective membrane to the substrate at a top portion of the bump, the semiconductor chip with the first protective membrane including the semiconductor chip produced after the dividing and the cutting, and the first protective membrane provided on a surface of the semiconductor chip having the bump, wherein the top portion of the bump protrudes from the first protective membrane.

### Claim 5 (depends on 4)

The method for manufacturing a semiconductor device according to claim 4, wherein in the attaching of the first protective membrane forming film, the first protective membrane forming film is attached to the surface of the semiconductor wafer having the bump at an attachment speed of 4 mm/s or more.

### Claim 6

A use of a sheet for forming a first protective membrane on at least a surface of a semiconductor wafer, the surface having a bump,
the sheet comprising a first base material, a buffer layer, an intermediate release layer, and a first protective membrane forming film stacked in this order in a thickness direction of thereof,
wherein the intermediate release layer contains an ethylene-vinyl acetate copolymer.