Surface processing method
AssigneeDenson Corporation
InventorsKazufumi AOKI, Naoki MARUNO, Bahman SOLTANI, Kantaro HORI, Ryuta FURUKAWA, Yuya KATO
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Abstract
A surface processing method for planarizing a processing surface of a workpiece includes the following procedures, treatments, or processes. With a wheel layer and the processing surface of the workpiece facing each other with an alkaline electrolyte solution between them, an oxide is formed on the processing surface of the workpiece by anodic oxidation by passing a current through the workpiece as an anode. The oxide formed on the processing surface by the anodic oxidation is removed by using the wheel layer.
Claims6
A surface processing method for planarizing a processing surface of a workpiece which is a silicon carbide semiconductor, comprising:
- with a wheel layer and the processing surface of the workpiece facing each other with an alkaline electrolyte solution between them, forming an oxide on the processing surface of the workpiece by anodic oxidation by passing a current through the workpiece as an anode;
- and
- by using the wheel layer, removing the oxide formed on the processing surface by the anodic oxidation, wherein,
- each potential of the workpiece and of sludge is controlled by the anodic oxidation with the alkaline electrolyte solution to suppress agglomeration of the sludge, suppress the agglomeration of abrasive grains released from the wheel layer, and suppress adhesion of the sludge to the processing surface.
Dependencies are inferred from the claim text.