# US 2025/0095993 A1 · Method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0095993 A1 - Document ID: US20250095993A1 - Status: Published application - Kind: A1 - Application number: 18/584,900 - Filed: 2024-02-22 - Published: 2025-03-20 - Earliest claimed: 2023-09-20 - Assignees: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation - Applicants: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation - Inventors: Seiya SAKAKURA - Web page: https://patentgrep.com/patent/US20250095993A1 ## CPC - H10P 30/204: {into Group IV semiconductors} - H10D 12/038: {having a recessed gate, e.g. trench-gate IGBTs} - H10D 62/53: the imperfections being within the semiconductor body - H10P 30/208: {of electrically inactive species} - H10P 30/212: {Through-implantation} - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 8/422: {PN diodes having the PN junctions in mesas} - H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract According to one embodiment, a method for manufacturing a semiconductor device includes a first process, a second process, and a third process. The first process is performed on a semiconductor member including a first face and a crystal. The first process includes at least one of implanting a first element into a first portion of the semiconductor member from the first face or irradiating the first portion with a particle beam. In the second process, a second element is implanted into a first region of the semiconductor member and is not implanted into a second region of the semiconductor member. The first region and the second region are located between the first face and the first portion. The third process is performed to irradiate the semiconductor member with a first electromagnetic wave from the first face through the first region and the second region, after the second process. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, the method comprising: a first process performed on a semiconductor member including a first face, the semiconductor member including a crystal, the first process including at least one of implanting a first element into a first portion of the semiconductor member from the first face or irradiating the first portion with a particle beam; a second process to implant a second element into a first region of the semiconductor member and not to implant the second element into a second region of the semiconductor member, the first region and the second region being located between the first face and the first portion, a direction from the first region to the second region being along the first face; and a third process to irradiate the semiconductor member with a first electromagnetic wave from the first face through the first region and the second region after the second process, the first electromagnetic wave having a first peak wavelength. ### Claim 2 (depends on 1) The method according to claim 1, wherein the first process includes forming a defect of crystal in the first portion. ### Claim 3 (depends on 1) The method according to claim 1, wherein the second processing causes a first absorptance of the first region with respect to the electromagnetic wave having the first peak wavelength to be higher than a second absorptance of the second region with respect to the electromagnetic wave having the first peak wavelength. ### Claim 4 (depends on 1) The method according to claim 1, wherein the first element includes at least one selected from the group consisting of hydrogen, helium, neon, argon, krypton, xenon, and radon, and the particle beam includes an electron beam. ### Claim 5 (depends on 1) The method according to claim 1, wherein the semiconductor member includes silicon, and the first element includes at least one selected from the group consisting of phosphorus, arsenic, and antimony. ### Claim 6 (depends on 1) The method according to claim 1, wherein the second element includes at least one selected from the group consisting of phosphorus, arsenic, antimony, silicon, germanium, carbon, nitrogen, oxygen, and argon. ### Claim 7 (depends on 1) The method according to claim 1, further comprising: a fourth process performed after the third process, the fourth process including irradiating the first region with a second electromagnetic wave. ### Claim 8 (depends on 7) The method according to claim 7, wherein the irradiating the second electromagnetic wave includes irradiating the second region with the second electromagnetic wave. ### Claim 9 (depends on 7) The method according to claim 7, wherein the second electromagnetic wave has a second peak wavelength, and the second peak wavelength is shorter than the first peak wavelength. ### Claim 10 (depends on 9) The method according to claim 9, wherein the first electromagnetic wave is infrared ray, and the second electromagnetic wave is ultraviolet light or visible light. ### Claim 11 (depends on 7) The method according to claim 7, wherein the fourth process increases a crystallinity in the first region. ### Claim 12 (depends on 7) The method according to claim 7, wherein a crystallinity in the first region after the fourth process is higher than a crystallinity in the first region after the third process and before the fourth process. ### Claim 13 (depends on 7) The method according to claim 7, wherein the irradiating the first region with the second electromagnetic wave melts at least a part of the first region. ### Claim 14 (depends on 13) The method according to claim 13, wherein the irradiating the first region with the first electromagnetic wave does not melt the first region. ### Claim 15 (depends on 3) The method according to claim 3, wherein a second dose amount of the second element to the first region in the second process is 5×1014 cm−2 or more. ### Claim 16 (depends on 3) The method according to claim 3, wherein a second dose amount of the second element to the first region in the second process is not less than 5×1014 cm−2 and not more than 5×1016 cm−2. ### Claim 17 (depends on 1) The method according to claim 1, wherein the first process includes the implanting the first element, and a dose amount of the first element in the implanting the first element is lower than a second dose amount of the second element to the first region in the second process. ### Claim 18 (depends on 7) The method according to claim 7, wherein the second electromagnetic wave includes a pulse laser having a second pulse width of not less than 50 ns and not more than 1200 ns. ### Claim 19 (depends on 1) The method according to claim 1, wherein the first electromagnetic wave includes a pulse laser having a first pulse width of not less than 1 μs and not more than 200 μs. ### Claim 20 (depends on 1) The method according to claim 1, wherein after the second process, at least a part of the first region includes an amorphous region.