Film forming method and film forming apparatus

A film forming apparatus for forming a silicon oxide film on a substrate, the film forming apparatus comprising:

• a processing container;
• a gas supply configured to supply a gas into the processing container;
• and
• a controller,
• wherein the controller is configured to control the gas supply to perform:
• (a) preparing a substrate having on a surface thereof a first region where an insulating film is exposed and a second region where a conductive film is exposed;
• (b) selectively forming an inhibiting layer for inhibiting formation of the silicon oxide film on the second region;
• (c) forming the silicon oxide film on the first region while inhibiting formation of the silicon oxide film on the second region by the inhibiting layer;
• and
• (d) reforming the silicon oxide film formed on the first region,
• wherein (c) includes:
• (c1) supplying a metal catalyst gas to the surface and adsorbing the metal catalyst gas to the first region;
• and
• (c2) supplying a silanol-containing gas to the surface to react the silanol-containing gas with the metal catalyst gas adsorbed to the first region to form the silicon oxide film, and
• Wherein (d) includes:
• (d1) exposing the surface to a plasma formed from a first gas containing hydrogen gas;
• and
• (d2) exposing the surface to the plasma formed from a second gas containing no hydrogen gas and containing an inert gas.