# US 2025/0095960 A1 · Ion implantation apparatus and semiconductor device manufacturing method using the same

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- Number: US 2025/0095960 A1
- Document ID: US20250095960A1
- Status: Published application
- Kind: A1
- Application number: 18/650,860
- Filed: 2024-04-30
- Published: 2025-03-20
- Earliest claimed: 2023-09-14
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Sang Woo SEON
- Web page: https://patentgrep.com/patent/US20250095960A1

## CPC

- H01J 37/3171: {for ion implantation}
- H01J 37/08: Ion sources; Ion guns
- H10P 30/20: into semiconductor materials, e.g. for doping
- H01J 2237/0213: Avoiding deleterious effects due to interactions between particles and tube elements
- H01J 2237/022: Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An ion implantation apparatus includes a process chamber into which a substrate is loaded; an ion generation chamber adjacent to the process chamber in a first direction, wherein the ion generation chamber is configured to generate ions and supply the ions to the process chamber in the first direction; a plasma flood gun (PFG) adjacent to the process chamber in a second direction, wherein the PFG is configured to generate electrons and supply the electrons to the process chamber in the second direction; a PFG cage between the PFG and the process chamber and through which the electrons migrate to the process chamber; and a liner film covering at least a portion of an inner sidewall of the process chamber, wherein the liner film includes a conductive material, and wherein the first direction and the second direction are perpendicular to each other.

## Claims

### Claim 1

An ion implantation apparatus comprising:
a process chamber into which a substrate is loaded, and in which an ion implantation process is performed on the substrate;
an ion generation chamber adjacent to the process chamber in a first direction, wherein the ion generation chamber is configured to generate ions and supply the ions to the process chamber in the first direction;
a plasma flood gun (PFG) adjacent to the process chamber in a second direction, wherein the PFG is configured to generate electrons and supply the electrons to the process chamber in the second direction;
a PFG cage between the PFG and the process chamber and through which the electrons migrate to the process chamber; and
a liner film covering at least a portion of an inner sidewall of the process chamber,
wherein the liner film comprises a conductive material, and
wherein the first direction and the second direction intersect each other.

### Claim 2 (depends on 1)

The ion implantation apparatus of claim 1, wherein the liner film comprises a graphite material.

### Claim 3 (depends on 1)

The ion implantation apparatus of claim 1, wherein the liner film comprises:
a first portion extending in the first direction and a third direction; and
a second portion connected to the first portion and extending in the second direction, and
wherein the third direction intersects the first and second directions.

### Claim 4 (depends on 3)

The ion implantation apparatus of claim 3, wherein the second portion is between the PFG cage and the process chamber.

### Claim 5 (depends on 3)

The ion implantation apparatus of claim 3, wherein the second portion is in the PFG cage, and
wherein the PFG cage and the process chamber are in contact with each other.

### Claim 6 (depends on 3)

The ion implantation apparatus of claim 3, wherein at least a portion of the second portion protrudes from an outer sidewall of the process chamber.

### Claim 7 (depends on 1)

The ion implantation apparatus of claim 1, wherein a surface of the liner film is exposed to the ions, and
wherein the surface of the liner film has at least one of a hatched pattern, a checkered pattern, and a dot pattern.

### Claim 8 (depends on 1)

The ion implantation apparatus of claim 1, wherein a resistance of the liner film is equal to a resistance of carbon.

### Claim 9

An ion implantation apparatus comprising:
a process chamber into which a substrate is loaded, wherein an ion implantation process of irradiating ions in a first direction toward an upper surface of the substrate is performed in the process chamber,
wherein the process chamber comprises:
a first inner sidewall extending in the first direction and a second direction,
a second inner sidewall extending in the first direction and the second direction and facing the first inner sidewall,
a third inner sidewall extending in the first direction and a third direction and,
a fourth inner sidewall extending in the first direction and the third direction and facing the third inner sidewall;
an ion generation chamber adjacent to the process chamber in the first direction, and configured to generate the ions and supply the ions to the process chamber in the first direction;
a plasma flood gun (PFG) spaced apart from the third inner sidewall of the process chamber in the second direction, and configured to generate electrons and supply the electrons to the process chamber in the second direction;
a PFG cage between the third inner sidewall of the process chamber and the PFG, and through which the electrons migrate to the process chamber; and
a pair of liner films covering at least a portion of at least one of the first inner sidewall, the second inner sidewall, and the third inner sidewall of the process chamber,
wherein the pair of liner films are spaced apart from each other in the third direction and face each other in the third direction, and
wherein a surface of the pair of liner films has at least one of a hatched pattern, a checkered pattern, and a dot pattern.

### Claim 10 (depends on 9)

The ion implantation apparatus of claim 9, wherein a resistance of one of the pair of liner films is equal to a resistance of carbon.

### Claim 11 (depends on 9)

The ion implantation apparatus of claim 9, wherein one of the pair of liner films comprises a conductive material.

### Claim 12 (depends on 9)

The ion implantation apparatus of claim 9, wherein one of the pair of liner films comprises:
a first portion extending in the first direction and the third direction; and
a second portion connected to the first portion and extending in the second direction.

### Claim 13 (depends on 12)

The ion implantation apparatus of claim 12, wherein the second portion is between the PFG cage and the process chamber.

### Claim 14 (depends on 12)

The ion implantation apparatus of claim 12, wherein the second portion is in the PFG cage, and
wherein the PFG cage and the process chamber are in contact with each other.

### Claim 15 (depends on 12)

The ion implantation apparatus of claim 12, wherein at least a portion of the second portion protrudes from a sidewall of the process chamber.

### Claim 16

A method for manufacturing a semiconductor device, the method comprising:
loading a substrate into an ion implantation apparatus; and
performing an ion implantation process on the substrate,
wherein the ion implantation apparatus comprises:
a process chamber into which a substrate is loaded, and in which the ion implantation process is performed on the substrate;
an ion generation chamber adjacent to the process chamber in a first direction, wherein the ion generation chamber is configured to generate ions and supply the ions to the process chamber in the first direction;
a plasma flood gun (PFG) adjacent to the process chamber in a second direction, wherein the PFG is configured to generate electrons and supply the electrons to the process chamber in the second direction;
a PFG cage between the PFG and the process chamber and through which the electrons migrate to the process chamber; and
a liner film covering at least a portion of an inner sidewall of the process chamber,
wherein the liner film comprises a conductive material,
wherein the first direction and the second direction is perpendicular to each other.

### Claim 17 (depends on 16)

The method of claim 16, wherein the liner film comprises:
a first portion extending in the first direction and a third direction; and
a second portion connected to the first portion and protruding in the second direction, and
wherein the third direction is perpendicular to the first and second directions.

### Claim 18 (depends on 17)

The method of claim 17, wherein the second portion is in the PFG cage, and
wherein the PFG cage and the process chamber are in contact with each other.

### Claim 19 (depends on 16)

The method of claim 16, wherein a surface of the liner film is exposed to the ions, and
wherein the surface of the liner film has at least one of a hatched pattern, a checkered pattern, and a dot pattern.

### Claim 20 (depends on 16)

The method of claim 16, wherein a resistance of the liner film is equal to a resistance of carbon.