Computing-In-Memory Architecture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chun Shih, Chia-Fu Lee, Yu-Der Chih, Jonathan Tsung-Yung Chang
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chun Shih, Chia-Fu Lee, Yu-Der Chih, Jonathan Tsung-Yung Chang
Estimating the term…
Systems and methods are provided for a computing-in memory circuit that includes a bit line and a plurality of computing cells connected to the bit line. Each of the plurality of computing cells includes a memory element, having a data output terminal; a logic element, having a first input terminal, a second input terminal and an output terminal, wherein the first input terminal is coupled to the data output terminal of the memory element, the second input terminal receives a select signal; and a capacitor, having a first terminal and a second terminal, where the first terminal is coupled to the output terminal of the logic element, the second terminal is coupled to the bit line. A voltage of the bit line is driven by the plurality of computing cells.
A memory circuit comprising:
A method of reading data from an array of memory cells, the method comprising:
A memory device comprising:
Dependencies are inferred from the claim text.