# US 2025/0094281 A1 · Storage system and data center including the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0094281 A1 - Document ID: US20250094281A1 - Status: Published application - Kind: A1 - Application number: 18/618,856 - Filed: 2024-03-27 - Published: 2025-03-20 - Earliest claimed: 2023-09-18 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Seunghan Lee; Juhwan Lim; Sanghun Jun; Bumjun Kim - Web page: https://patentgrep.com/patent/US20250094281A1 ## CPC - G06F 3/0688: {Non-volatile semiconductor memory arrays} - G06F 11/108: {Parity data distribution in semiconductor storages, e.g. in SSD} - G06F 1/30: Means for acting in the event of power-supply failure or interruption, e.g. power-supply fluctuations (for resetting only G06F1/24) - G06F 3/0619: {in relation to data integrity, e.g. data losses, bit errors} - G06F 3/0659: {Command handling arrangements, e.g. command buffers, queues, command scheduling} - G06F 13/16: for access to memory bus (G06F13/28 takes precedence) - G06F 13/4022: {using switching circuits, e.g. switching matrix, connection or expansion network (G06F13/4009 takes precedence)} - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) ## Abstract A storage system includes a plurality of DRAM-less storage devices, a CXL memory expander, and a PLP capacitor. The DRAM-less storage devices include nonvolatile memories as a storage medium, and a DRAM is omitted in the DRAM-less storage devices. The CXL memory expander is electrically connected to the DRAM-less storage devices, communicates through a CXL interface and operates as a buffer memory of the DRAM-less storage devices. The PLP capacitor is electrically connected to the DRAM-less storage devices and the CXL memory expander, is disposed outside the DRAM-less storage devices, and supplies an auxiliary power voltage to the DRAM-less storage devices and the CXL memory expander in a SPO condition in which an external power voltage is suddenly turned off. ## Claims ### Claim 1 A storage system comprising: a plurality of dynamic random access memory (DRAM)-less storage devices, each DRAM-less storage device of the plurality of DRAM-less storage devices including a plurality of nonvolatile memories; at least one compute express link (CXL) memory expander electrically connected to the plurality of DRAM-less storage devices, the at least one CXL memory expander configured to communicate through a CXL interface and to operate as a buffer memory of the plurality of DRAM-less storage devices; and a power loss protection (PLP) capacitor electrically connected to the plurality of DRAM-less storage devices and the at least one CXL memory expander and disposed outside the plurality of DRAM-less storage devices, the PLP capacitor configured to supply an auxiliary power voltage to the plurality of DRAM-less storage devices and the at least one CXL memory expander in a sudden power-off (SPO) condition, wherein the at least one CXL memory expander includes a first memory region allocated for the plurality of DRAM-less storage devices, and wherein the first memory region is configured to store mapping data including mapping information corresponding to a plurality of user data stored in the plurality of nonvolatile memories included in the plurality of DRAM-less storage devices. ### Claim 2 (depends on 1) The storage system of claim 1, wherein the first memory region is set in an initial operation time of the storage system. ### Claim 3 (depends on 1) The storage system of claim 1, further comprising a host device configured to control an operation of the storage system, wherein the at least one CXL memory expander further includes a second memory region different from the first memory region, and wherein the second memory region is configured to be accessed and managed by the host device. ### Claim 4 (depends on 1) The storage system of claim 1, further comprising at least one accelerator electrically connected to the plurality of DRAM-less storage devices and the at least one CXL memory expander and formed separately from a host device that controls an operation of the storage system, wherein the at least one accelerator is configured to perform a data processing function, and to perform at least one of an erasure code function and an end-to-end data protection function for the plurality of DRAM-less storage devices. ### Claim 5 (depends on 4) The storage system of claim 4, wherein, in the SPO condition, data stored in the at least one CXL memory expander is flushed to the at least one accelerator. ### Claim 6 (depends on 5) The storage system of claim 5, wherein the at least one accelerator includes at least one nonvolatile memory, and wherein, in the SPO condition, the data stored in the at least one CXL memory expander is flushed to the at least one nonvolatile memory included in the at least one accelerator. ### Claim 7 (depends on 1) The storage system of claim 1, further comprising at least one computational storage device electrically connected to the plurality of DRAM-less storage devices and the at least one CXL memory expander and formed separately from the plurality of DRAM-less storage devices, wherein the at least one computational storage device is configured to perform a data storage function and a data processing function together, and to perform at least one of an erasure code function and an end-to-end data protection function for the plurality of DRAM-less storage devices. ### Claim 8 (depends on 7) The storage system of claim 7, wherein, in the SPO condition, data stored in the at least one CXL memory expander is flushed to the at least one computational storage device. ### Claim 9 (depends on 8) The storage system of claim 8, wherein the at least one computational storage device includes a plurality of nonvolatile memories, and wherein, in the SPO condition, the data stored in the at least one CXL memory expander is flushed to at least one nonvolatile memory of the plurality of nonvolatile memories included in the at least one computational storage device. ### Claim 10 (depends on 1) The storage system of claim 1, wherein each of the plurality of DRAM-less storage devices further includes a storage controller configured to control operations of the plurality of nonvolatile memories, and wherein the storage controller is configured to perform an enhanced error correction code (ECC) function for the plurality of DRAM-less storage devices. ### Claim 11 (depends on 10) The storage system of claim 10, wherein a flash translation layer (FTL) function for the plurality of DRAM-less storage devices is performed by a host device that controls an operation of the storage system, and wherein the storage controller is configured to perform the enhanced ECC function rather than the FTL function. ### Claim 12 (depends on 10) The storage system of claim 10, wherein, in the SPO condition, data stored in the at least one CXL memory expander is flushed to at least one nonvolatile memory of the plurality of nonvolatile memories included in the plurality of DRAM-less storage devices. ### Claim 13 (depends on 1) The storage system of claim 1, wherein write data to be written into at least one nonvolatile memory of the plurality of DRAM-less storage devices is temporarily stored in at least one CXL memory expander, and wherein a write operation in which the write data is stored in the at least one nonvolatile memory of the plurality of DRAM-less storage devices is performed using the write data temporarily stored in the at least one CXL memory expander. ### Claim 14 (depends on 1) The storage system of claim 1, wherein the plurality of nonvolatile memories included in the plurality of DRAM-less storage devices include a plurality of memory cells each of which stores data having two or more bits. ### Claim 15 (depends on 14) The storage system of claim 14, wherein each of the plurality of memory cells is a quadruple-level cell (QLC) configured to store 4-bit data. ### Claim 16 (depends on 1) The storage system of claim 1, further comprising: a first substrate on which the plurality of DRAM-less storage devices and the at least one CXL memory expander are mounted; and a second substrate on which the PLP capacitor is mounted, the second substrate being formed separately from the first substrate. ### Claim 17 (depends on 16) The storage system of claim 16, wherein the plurality of DRAM-less storage devices and the at least one CXL memory expander have a same form factor for mounting on the first substrate. ### Claim 18 A data center comprising: a plurality of application servers configured to receive a data write request or a data read request; and a plurality of storage servers configured to store write data corresponding to the data write request or to output read data corresponding to the data read request, wherein a first storage server among the plurality of storage servers includes: a plurality of first dynamic random access memory (DRAM)-less storage devices, each of the plurality of first DRAM-less storage devices including a plurality of nonvolatile memories; at least one first compute express link (CXL) memory expander electrically connected to the plurality of first DRAM-less storage devices, the at least one first CXL memory expander configured to communicate through a CXL interface and to operate as a buffer memory of the plurality of first DRAM-less storage devices; and a first power loss protection (PLP) capacitor electrically connected to the plurality of first DRAM-less storage devices and the at least one first CXL memory expander and disposed outside the plurality of first DRAM-less storage devices, the first PLP capacitor configured to supply an auxiliary power voltage to the plurality of first DRAM-less storage devices and the at least one first CXL memory expander in a sudden power-off (SPO) condition, wherein the at least one first CXL memory expander includes a first memory region allocated for the plurality of first DRAM-less storage devices, and wherein the first memory region is configured to store mapping data including mapping information corresponding to a plurality of user data stored in the plurality of nonvolatile memories included in the plurality of first DRAM-less storage devices. ### Claim 19 (depends on 18) The data center of claim 18, wherein the first storage server further includes a first host device, wherein a second storage server among the plurality of storage servers includes a second host device, a plurality of second DRAM-less storage devices and at least one second CXL memory expander, and wherein the data center further includes: a first server rack on which the first host device and the second host device are mounted; and a second server rack on which the plurality of first DRAM-less storage devices, the at least one first CXL memory expander, the plurality of second DRAM-less storage devices and the at least one second CXL memory expander are mounted, the second server rack being formed separately from the first server rack. ### Claim 20 A storage system comprising: a host device; a plurality of quadruple-level cell (QLC) dynamic random access memory (DRAM)-less storage devices controlled by the host device, each of the plurality of QLC DRAM-less storage devices including a plurality of QLC nonvolatile memories including a plurality of QLCs configured to store 4-bit data as a storage medium; at least one compute express link (CXL) memory expander controlled by the host device and electrically connected to the plurality of QLC DRAM-less storage devices, the at least one CXL memory expander configured to communicate through a CXL interface and to operate as a buffer memory of the plurality of QLC DRAM-less storage devices; at least one accelerator electrically connected to the plurality of QLC DRAM-less storage devices and the at least one CXL memory expander and formed separately from the host device, the at least one accelerator configured to perform a data processing function, and to perform at least one of an erasure code function and an end-to-end data protection function for the plurality of QLC DRAM-less storage devices; and a power loss protection (PLP) capacitor electrically connected to the plurality of QLC DRAM-less storage devices and the at least one CXL memory expander and disposed outside the plurality of QLC DRAM-less storage devices, the PLP capacitor configured to supply an auxiliary power voltage to the plurality of QLC DRAM-less storage devices and the at least one CXL memory expander in a sudden power-off (SPO) condition, wherein the at least one CXL memory expander includes: a first memory region for the plurality of QLC DRAM-less storage devices; and a second memory region configured to be accessed and managed by the host device, wherein the first memory region is configured to store mapping data including mapping information corresponding to a plurality of user data stored in the plurality of QLC nonvolatile memories included in the plurality of QLC DRAM-less storage devices, wherein the at least one accelerator includes at least one nonvolatile memory, and wherein, in the SPO condition, data stored in the at least one CXL memory expander is flushed to the at least one nonvolatile memory included in the at least one accelerator.