# US 2025/0093773 A1 · Organometallic solution based high resolution patterning compositions

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- Number: US 2025/0093773 A1
- Document ID: US20250093773A1
- Status: Published application
- Kind: A1
- Application number: 18/970,543
- Filed: 2024-12-05
- Published: 2025-03-20
- Earliest claimed: 2013-08-22
- Assignees: Inpria Corporation
- Applicants: Inpria Corporation
- Inventors: Stephen T. Meyers; Douglas A. Keszler; Kai Jiang; Jeremy T. Anderson; Andrew Grenville
- Web page: https://patentgrep.com/patent/US20250093773A1

## CPC

- G03F 7/0042: {with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence)}
- G03F 7/0043: {Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof (G03F7/0044 takes precedence)}
- G03F 7/09: characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N)
- G03F 7/20: Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00)
- G03F 7/2002: {with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image}
- G03F 7/2037: {Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation}
- G03F 7/30: Imagewise removal using liquid means
- G03F 7/32: Liquid compositions therefor, e.g. developers
- G03F 7/322: {Aqueous alkaline compositions}
- G03F 7/325: {Non-aqueous compositions}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

## Claims

### Claim 1

An organotin precursor solution comprising a solvent comprising a carboxylic acid having the formula R′COOH, and an organotin composition having an Sn—R bond and/or an Sn—O2R″ bond, wherein R, R′, and R″ are independently an alkyl ligand, alkenyl ligand, aryl ligand, or a combination thereof having from 1-16 carbon atoms.

### Claim 2 (depends on 1)

The organotin precursor solution of claim 1 wherein the organotin composition has both an Sn—R bond and an Sn—O2R″ bond.

### Claim 3 (depends on 1)

The organotin precursor solution of claim 1 wherein the organotin composition further comprises an Sn—OH bond.

### Claim 4 (depends on 1)

The organotin precursor solution of claim 1 wherein R is a methyl, ethyl, i-propyl, n-butyl, s-butyl, t-butyl, t-amyl, or neopentyl group, or combination thereof.

### Claim 5 (depends on 1)

The organotin precursor solution of claim 1 wherein R is a t-butyl group.

### Claim 6 (depends on 1)

The organotin precursor solution of claim 1 wherein R″ is an alkyl group with 1 to 10 carbon atoms, or a combination thereof.

### Claim 7 (depends on 1)

The organotin precursor solution of claim 1 wherein the Sn—O2R″ bond comprises a formate, an acetate, a propionate, an oxalate, a butanoate, or a benzoate ligand, or combinations thereof.

### Claim 8 (depends on 1)

The organotin precursor solution of claim 1 wherein the carboxylic acid comprises formic acid, acetic acid, propionic acid, oxalic acid, butanoic acid, benzoic acid, or combinations thereof.

### Claim 9 (depends on 1)

The organotin precursor solution of claim 1 wherein R′ and R″ are the same.

### Claim 10 (depends on 1)

The organotin precursor solution of claim 1 wherein the solvent further comprises an organic solvent.

### Claim 11 (depends on 10)

The organotin precursor solution of claim 10 wherein the organic solvent comprises an alcohol, ester, ketone, or a mixture thereof.

### Claim 12 (depends on 1)

The organotin precursor solution of claim 1 wherein the solvent comprises anisole, ethyl lactate, tetrahydrofuran, 1-methoxy-2-propanol, 4-methyl-2-pentanol, cyclopentanol, methanol, ethanol, n-propanol, or isopropanol, or mixtures thereof.

### Claim 13 (depends on 1)

The organotin precursor solution of claim 1 having a tin concentration of about 0.05 mM to about 1.2 M.

### Claim 14

A method for forming a radiation-patternable film, the method comprising
depositing an organotin precursor solution comprising a solvent and an organotin composition having an Sn—R bond and/or an Sn—O2R′ bond onto a substrate to form the radiation-patternable film,
wherein the solvent comprises a carboxylic acid, and
wherein R, R′, and R″ are independently an alkyl ligand, alkenyl ligand, aryl ligand, or a combination thereof having from 1-16 carbon atoms.

### Claim 15 (depends on 14)

The method of claim 14 wherein the organotin composition has both an Sn—R bond and an Sn—O2R″ bond.

### Claim 16 (depends on 14)

The method of claim 14 wherein the substrate comprises a silicon wafer.

### Claim 17 (depends on 14)

The method of claim 14 wherein the depositing comprises spin coating, spray coating, dip coating, knife edge coating, or printing approaches.

### Claim 18 (depends on 14)

The method of claim 14 wherein the radiation-patternable film has an average thickness from about 1 nm to about 50 nm.

### Claim 19 (depends on 18)

The method of claim 18 wherein the radiation-patternable film has thickness that varies no more than 25% from the average coating thickness.

### Claim 20 (depends on 14)

The method of claim 14 wherein the radiation-patternable film comprises a polymeric metal oxo-hydroxo and/or carboxylato network or a molecular solid comprising polynuclear metal oxo/hydroxo and/or carboxylato species with alkyl ligands.