Light detection element, image sensor and method for producing light detection element

A photodetector element comprising:

• a photoelectric conversion element;
• an optical filter provided on a light incident side of the photoelectric conversion element;
• a dielectric multi-layer film provided on a light incident side of the optical filter;
• and
• an interlayer provided between the photoelectric conversion element and the optical filter,
• wherein the photoelectric conversion element has a quantum dot layer including quantum dots and having a maximal absorption wavelength of an absorbance present in a wavelength range of 900 to 1,700 nm, a first electrode provided on a light incident side of the quantum dot layer, and a second electrode provided on a surface of the quantum dot layer on a side opposite to a side on which the first electrode is provided,
• the optical filter is a laminated film including a first filter layer including a coloring material and a second filter layer including a coloring material, the coloring material included in the first filter layer includes a chromatic coloring material, with a content of the chromatic coloring material in all coloring materials being 80% by mass or more, and the coloring material included in the second filter layer includes an infrared absorbing coloring material, with a content of the infrared absorbing coloring material in all coloring materials being 80% by mass or more, and
• the interlayer has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 1×10−4 g/m2/day or less.

A method for manufacturing a photodetector element including a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, a dielectric multi-layer film provided on a light incident side of the optical filter, and an interlayer provided between the photoelectric conversion element and the optical filter, the method comprising:

• a step of applying a composition for forming a first filter layer or a composition for forming a second filter layer onto the interlayer to form a composition layer, and exposing the composition layer two or more times to form a first filter layer or a second filter layer,
• wherein the photoelectric conversion element has a quantum dot layer including quantum dots and having a maximal absorption wavelength of an absorbance present in a wavelength range of 900 to 1,700 nm, a first electrode provided on a light incident side of the quantum dot layer, and a second electrode provided on a surface of the quantum dot layer on a side opposite to a side on which the first electrode is provided,
• the optical filter is a laminated film including a first filter layer including a coloring material and a second filter layer including a coloring material, the coloring material included in the first filter layer includes a chromatic coloring material, with a content of the chromatic coloring material in all coloring materials being 80% by mass or more, and the coloring material included in the second filter layer includes an infrared absorbing coloring material, with a content of the infrared absorbing coloring material in all coloring materials being 80% by mass or more, and
• the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer.