Sensor
AssigneeSony Semiconductor Solutions Corporation
InventorNOBUO NAKAMURA
Life of this patent
Estimating the term…
Abstract
A sensor that can reduce kTC noise and can be miniaturized is provided. A sensor according to the present embodiment is a sensor including a plurality of pixels, in which each of the pixels includes a semiconductor layer of a first conductivity type having a first surface, a photoelectric conversion section that is provided in the semiconductor layer and converts light incident on the semiconductor layer into a charge, a first channel layer of the first conductivity type that is provided on a side of the first surface in the semiconductor layer, a first gate electrode provided above the first channel layer, and a first capacitor layer of a second conductivity type that is provided below the first channel layer and accumulates the charge.
Claims44
A sensor comprising a plurality of pixels, wherein
- each of the pixels includes
- a semiconductor layer of a first conductivity type having a first surface,
- a photoelectric conversion section that is provided in the semiconductor layer and converts light incident on the semiconductor layer into a charge,
- a first channel layer of the first conductivity type that is provided on a side of the first surface in the semiconductor layer,
- a first gate electrode provided above the first channel layer, and
- a first capacitor layer of a second conductivity type that is provided below the first channel layer and accumulates the charge.
A sensor comprising a plurality of pixels, wherein
- each of the pixels includes
- a photoelectric conversion section that converts incident light into a charge,
- a first and a second distribution transistor that alternately distribute charges from the photoelectric conversion section and a first and a second memory section that accumulate charges distributed by the first and the second distribution transistor, respectively, and
- a third and a fourth memory section that accumulate charges from the first and the second memory section, respectively.
A sensor comprising a plurality of pixels, wherein
- each of the pixels includes
- a photoelectric conversion section that converts incident light into a charge,
- a first capacitor layer that accumulates a charge from the photoelectric conversion section,
- a first charge transistor that is provided above the first capacitor layer and accumulates charges from the photoelectric conversion section to the first capacitor layer,
- a first floating diffusion region that accumulates a charge from the first capacitor layer, and
- a first transfer transistor provided between the first floating diffusion region and the first charge transistor.
A sensor that converts incident light into a charge and acquires an image according to the charge, the sensor comprising:
- a photoelectric conversion section that accumulates a charge generated in a part of shutter periods among a plurality of shutter periods obtained by dividing an imaging period of one frame constituting the image;
- and
- a signal processing section that estimates a signal of the entire frame from a charge in the part of the shutter period.
A sensor that converts incident light into a charge and acquires an image according to the charge, the sensor comprising:
- a photoelectric conversion section that accumulates charges generated in imaging periods of a plurality of frames constituting the image;
- and
- a signal processing section that estimates a signal of a first frame of the plurality of frames from charges of the plurality of frames.
Dependencies are inferred from the claim text.