Method for forming semiconductor structure

A method for forming a semiconductor structure, comprising:

• receiving a substrate, wherein a first dielectric structure, a first hybrid structure and a second hybrid structure are formed over the substrate, and each of the first hybrid structure and the second hybrid structure comprises a first cap layer over the substrate and a first metallization feature between the first cap layer and the substrate;
• forming a second cap layer over the first hybrid structure;
• removing portions of the first cap layer of the second hybrid structure exposed through the second cap layer;
• forming an insulating layer over the substrate;
• forming a patterned second dielectric structure over the substrate, wherein the patterned second dielectric structure comprises a trench exposing the first cap layer of the first hybrid structure;
• removing the first cap layer of the first hybrid structure to form a via opening exposing the first metallization feature of the first hybrid structure;
• and
• forming a second metallization feature in the trench and a via structure in the via opening.

A method for forming a semiconductor structure, comprising:

• forming a hybrid structure extending along a first direction over a substrate, wherein the hybrid structure comprises a first metallization feature and a first cap layer over the first metallization feature;
• forming an isolation structure extending along the first direction over the substrate, wherein the isolation structure comprises a first dielectric structure and a first insulating layer;
• forming a second cap layer over the hybrid structure and the isolation structure, wherein the second cap layer extends along a second direction different from the first direction;
• forming a second insulating layer over the substrate;
• and
• forming a patterned second dielectric structure over the substrate, wherein the patterned second dielectric structure comprises a trench and a via opening coupled to a bottom of the trench,
• wherein the first insulating layer is exposed through a first sidewall of the via opening in the first direction, and the second insulating layer is exposed through a second sidewall of the via opening in the second direction.