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US 2025/0087472 A1Published application
Simultaneous etching of multi-faceted substrates
OwnerSamuel D. Harkness, IV, James Sullivan +1inventors
InventorsSamuel D. Harkness, IV, James Sullivan, Eric C. Lawson
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Abstract
In an apparatus and related method, a substrate that has multiple facets is held in a chamber of a plasma reactor that has multiple plasma cavities. The substrate is positioned by a transport arrangement with each plasma cavity of the plasma reactor aligned to a facet of the substrate. A plasma is generated in each plasma cavity, to apply simultaneous plasma processing to multiple facets of the substrate.
Claims23
An inductively coupled plasma (ICP) station, comprising:
- a plasma reactor having a chamber with at least a first plasma cavity with a first plasma distribution zone aligned to a first axis and a second plasma cavity with a second plasma distribution zone aligned to a second axis;
- a first plasma source maintaining a first plasma in the first plasma distribution zone of the first plasma cavity;
- and
- a second plasma source maintaining a second plasma in the second plasma distribution zone of the second plasma cavity;
- a transport arrangement positioning a substrate to be processed within the chamber with the first axis normal to a first facet of the substrate and the second axis normal to a second facet of the substrate, with simultaneous processing applied to the first facet and the second facet of the substrate using the first plasma and the second plasma.
2 more elements
A method of operation of an inductively coupled plasma (ICP) station, comprising:
- holding a substrate in a chamber of a plasma reactor, using a transport arrangement to position the substrate with a first plasma cavity and first plasma distribution zone of the plasma reactor aligned to a first axis that is normal to a first facet of the substrate, and with a second plasma cavity and second plasma distribution zone of the plasma reactor aligned to a second axis that is normal to a second facet of the substrate;
- biasing the substrate;
- and
- generating a plasma in each such plasma cavity, to apply simultaneous plasma processing to the first and second facets of the substrate.
1 more element
Dependencies are inferred from the claim text.