Electro-optical modulator with an integrated memory device

An electro-optic modulator with an integrated memory device comprising:

• a micro-ring resonator comprising:
• a substrate;
• an electrode layer disposed on the substrate, the electrode layer being electrically connected to a ground;
• a dielectric layer disposed on the electrode layer;
• a raised ring waveguide disposed on the dielectric layer, wherein the raised ring waveguide comprises a non-centrosymmetric material;
• the memory device comprising a ferroelectric capacitor disposed on a partial circumference of the raised ring waveguide of the micro-ring resonator, the ferroelectric capacitor comprising:
• a first transparent electrode disposed on the raised ring waveguide;
• a ferroelectric layer disposed on the first transparent electrode;
• and
• a second transparent electrode disposed on the ferroelectric layer such that the ferroelectric layer is interposed between the first and the second transparent electrodes,
• wherein a first electric field is generated between the first and the second transparent electrodes in response to a first voltage being applied between the first and the second transparent electrodes, the first electric field causing a polarization state of the ferroelectric layer to change based on the strength of the first electric field,
• wherein the polarization state of the ferroelectric layer remains at the changed state when the first voltage is removed, and
• wherein an extended electric field is generated between the ferroelectric layer and the electrode layer in response to the first voltage being removed, the extended electric field causing a refractive index of the non-centrosymmetric material to change based on a strength of the extended electric field.