# US 2025/0084530 A1 · Film-forming method and film-forming apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0084530 A1 - Document ID: US20250084530A1 - Status: Published application - Kind: A1 - Application number: 18/819,238 - Filed: 2024-08-29 - Published: 2025-03-13 - Earliest claimed: 2023-09-12 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Yohei MATSUYAMA; Ken OKOSHI; Yuki KIKUCHI - Web page: https://patentgrep.com/patent/US20250084530A1 ## CPC - C23C 16/345: {Silicon nitride} - C23C 16/342: {Boron nitride} - C23C 16/36: Carbonitrides - C23C 16/45531: {specially adapted for making ternary or higher compositions} - C23C 16/45538: {Plasma being used continuously during the ALD cycle} - C23C 16/45542: {Plasma being used non-continuously during the ALD reactions} - C23C 16/45544: {characterized by the apparatus} - C23C 16/45553: {characterized by the use of precursors specially adapted for ALD} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - H01J 37/3244: {Gas supply means} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane} - H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz} - H01J 2237/332: Coating - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A film-forming method according to an aspect of the present disclosure forms a film containing a silicon atom and a nitrogen atom on a surface of a substrate including a metal film at the surface of the substrate. The film-forming method includes: supplying a boron-containing gas and a first nitriding gas to the substrate, thereby forming a first film on the surface, the first film containing a boron atom and a nitrogen atom; and supplying a silicon-containing gas and a second nitriding gas to the substrate, thereby forming a second film on the first film, the second film containing a silicon atom and a nitrogen atom. ## Claims ### Claim 1 A film-forming method for forming a film containing a silicon atom and a nitrogen atom on a surface of a substrate including a metal film at the surface of the substrate, the film-forming method comprising: a) supplying a boron-containing gas and a first nitriding gas to the substrate, thereby forming a first film on the surface, the first film containing a boron atom and a nitrogen atom; and b) supplying a silicon-containing gas and a second nitriding gas to the substrate, thereby forming a second film on the first film, the second film containing a silicon atom and a nitrogen atom. ### Claim 2 (depends on 1) The film-forming method according to claim 1, wherein, a) is performed in a state in which the substrate is maintained at a first temperature, and b) is performed in a state in which the substrate is maintained at the first temperature. ### Claim 3 (depends on 2) The film-forming method according to claim 2, wherein, the first temperature is 550° C. or higher and 650° C. or lower. ### Claim 4 (depends on 1) The film-forming method according to claim 1, wherein, a) includes forming the first film through thermal atomic layer deposition (ALD) in which the supply of the boron-containing gas and the supply of the first nitriding gas are alternately repeated. ### Claim 5 (depends on 1) The film-forming method according to claim 1, wherein, a) includes forming the first film by exposing the substrate to a plasma generated from a hydrogen gas at either or both of: after the supply of the boron-containing gas yet before the supply of the first nitriding gas; and after the supply of the first nitriding gas yet before the supply of the boron-containing gas. ### Claim 6 (depends on 1) The film-forming method according to claim 1, wherein, b) includes forming the second film through plasma atomic layer deposition (ALD) in which the supply of the silicon-containing gas and exposure of the substrate to a plasma generated from the second nitriding gas are alternately repeated. ### Claim 7 (depends on 1) The film-forming method according to claim 1, wherein, the silicon-containing gas is a dichlorosilane gas. ### Claim 8 (depends on 1) The film-forming method according to claim 1, wherein, the second nitriding gas is the same gas as the first nitriding gas. ### Claim 9 (depends on 1) The film-forming method according to claim 1, wherein, the metal film is a ruthenium film. ### Claim 10 (depends on 2) The film-forming method according to claim 2, wherein, the metal film is a ruthenium film. ### Claim 11 (depends on 3) The film-forming method according to claim 3, wherein, the metal film is a ruthenium film. ### Claim 12 (depends on 4) The film-forming method according to claim 4, wherein, the metal film is a ruthenium film. ### Claim 13 (depends on 5) The film-forming method according to claim 5, wherein, the metal film is a ruthenium film. ### Claim 14 (depends on 6) The film-forming method according to claim 6, wherein, the metal film is a ruthenium film. ### Claim 15 (depends on 7) The film-forming method according to claim 7, wherein, the metal film is a ruthenium film. ### Claim 16 (depends on 8) The film-forming method according to claim 8, wherein, the metal film is a ruthenium film. ### Claim 17 A film-forming apparatus configured to form a film containing a silicon atom and a nitrogen atom on a surface of a substrate including a metal film at the surface of the substrate, the film-forming apparatus comprising: a process chamber configured to house the substrate; a gas supply configured to supply gas into the process chamber; and a controller, wherein the controller includes a processor, and a memory storing one or more programs, which when executed, cause the process to supply a boron-containing gas and a first nitriding gas to the substrate, thereby forming a first film on the surface, the first film containing a boron atom and a nitrogen atom, and supply a silicon-containing gas and a second nitriding gas to the substrate, thereby forming a second film on the first film, the second film containing a silicon atom and a nitrogen atom.