Fully metallic atomic-scale tin transistors with ultralow power dissipation
OwnerFangqing Xie, Thomas Schimmelinventors
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Abstract
An atomic-scale tin transistor device with ultralow power dissipation and a method for producing the same and its use. An atomic-scale tin transistor device includes a source electrode, a drain electrode, and a gate electrode. The source, drain, and gate electrodes are spaced apart from one another and immersed in an aqueous electrolyte containing tin ions in an electrochemical cell. The source electrode and drain electrode are connected to each other in an on-state by a bistable atomic-scale tin point-contact which can be reversibly opened and closed by dissolution/deposition potentials applied to the gate electrode, respectively.
Claims15
An atomic-scale tin transistor device comprising:
- a source electrode;
- a drain electrode;
- and
- a gate electrode,
- wherein the source, drain, and gate electrodes are spaced apart from one another and immersed in an aqueous electrolyte containing tin ions in an electrochemical cell,
- wherein the source electrode and drain electrode are connected to each other in an on-state by a bistable atomic-scale tin point-contact which can be reversibly opened and closed by dissolution/deposition potentials applied to the gate electrode, respectively, and
- wherein the atomic-scale tin point-contact consists in the on-state at its narrowest point of at least one tin atom up to a few hundreds of tin atoms formed by electrochemical deposition of tin.
Dependencies are inferred from the claim text.