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AssigneeBandwidth10, LTD.
InventorsCarlos F. R. Mateus, Christopher Chase, Michael Y. Huang, Chuanshun Cao, Dalila Ellafi, Neelanjan Bandyopadhyay, Carl V. Ford, Kai Hui, D. Philip Worland
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A VCSEL epitaxial structure includes an etched post between an active region and a sacrificial layer. Aa regrowth of sacrificial layer and HCG layer are around the etched post. providing a fully epitaxial grown tunable VCSEL with a small cavity volume, lateral electrical current and optical confinement. The etched post and regrowth provide lateral current and optical confinement, small volume and increased efficiency for more demanding applications, such as very high-speed modulation and coherent communication.
A VCSEL epitaxial structure, comprising:
The VCSEL of claim 5, wherein the VCSEL is made with a regrowth of the sacrificial layer and the HCG layer is created around the etched post.
The VCSEL of claim 10, wherein the implantation is done on a layer between the active layer, and a thin sacrificial layer.
The VCSEL of claim 11, wherein atomic layer deposition (ALD) is performed on side walls of the etched post.
The VCSEL of claim 12, wherein ALD wall protection is used for further selective etching on release, and for reliability, the ALD wall providing isolation from surrounding air.
The VCSEL of claim 14, wherein an interface is etched away and a regrowth is provided around the etched post.
The VCSEL of claim 15, wherein a regrowth interface is out of optical/current paths.
The VCSEL of claim 16, wherein the regrown layer is thick enough for relaxing defects before arriving at the HCG layer.
The VCSEL of claim 17, wherein a mesa grows laterally during regrowth.
The VCSEL of claim 18, wherein mesa confinement is provided.
Dependencies are inferred from the claim text.