Gate unit for a gate-commutated thyristor and integrated gate-commutated thyristor

Abstract

The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: —a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); —a nonlinear inductor (27) serially coupled between the output of the voltage selector (26); —a gate control unit (23) configured to control the voltage selector (26) to control switching of the gate commutated thyristor (21) in its turn-on state comprising a turn-on pulse generation, a positive-gate-voltage backporch operation, a negative-gate-voltage backporch operation and a retrigger pulse generation; wherein the nonlinear inductor (27) has a nonlinearity to have a high inductance during any of the backporch operations and to have a low inductance during the turn-on pulse generation and retrigger pulse generation.

Dependencies are inferred from the claim text.