Back to results
US 2025/0069946 A1Published application
Method for fabricating photomask and method for fabricating semiconductor device with damascene structure
AssigneeNanya Technology Corporation
InventorCHIH-HSUAN YEH
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a method for fabricating a photomask. The method includes providing a mask substrate; forming an opaque layer on the mask substrate; pattern-writing the opaque layer to form a mask opening of trench feature in the opaque layer and expose the mask substrate; forming a translucent layer in the mask opening of trench feature to cover the mask substrate; and pattern-writing the translucent layer to form a mask opening of via feature to expose a portion of the mask substrate.
Claims5
A method for fabricating a photomask, comprising:
- providing a mask substrate;
- forming an opaque layer on the mask substrate;
- pattern-writing the opaque layer to form a mask opening of trench feature in the opaque layer and expose the mask substrate;
- forming a translucent layer in the mask opening of trench feature to cover the mask substrate;
- and
- pattern-writing the translucent layer to form a mask opening of via feature to expose a portion of the mask substrate.
3 more elements
Dependencies are inferred from the claim text.