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US 2025/0063956 A1Published application
Semiconductor structure, semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Yu CHEN, Sheng-Hung SHIH, Kuo-Chi TU, Wen-Ting CHU, Kuo-Ching HUANG, Harry-Haklay CHUANG
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Abstract
A semiconductor structure includes a ferroelectric layer and a semiconductor layer. Thee ferroelectric layer has a first surface and a second surface opposite to the first surface. The semiconductor layer is formed on one of the first surface and the second surface.
Claims20
A semiconductor structure, comprising:
- a ferroelectric layer having a first surface and a second surface opposite to the first surface;
- and
- a semiconductor layer formed on one of the first surface and the second surface.
A semiconductor device, comprising:
- a semiconductor structure, comprising:
- a ferroelectric layer having a first surface and a second surface opposite to the first surface;
- a semiconductor layer formed on one of the first surface and the second surface;
- and
- a top electrode formed over the semiconductor layer;
- an oxide layer covering the semiconductor structure and the top electrode;
- and
- a metal via passing through the oxide layer to electrically connect the top electrode.
5 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a semiconductor structure, wherein the semiconductor structure comprises a ferroelectric layer, a semiconductor layer and a top electrode, the ferroelectric layer has a first surface and a second surface opposite to the first surface, the semiconductor layer is formed on one of the first surface and the second surface, and the top electrode is formed over the semiconductor layer;
- forming an oxide layer to cover the semiconductor structure and the top electrode;
- and
- forming a metal via passing through the oxide layer to electrically connect the top electrode.
1 more element
Dependencies are inferred from the claim text.