Processing method of bonded wafer

A processing method of a bonded wafer, the bonded wafer including a first wafer having a chamfered portion formed on an outer periphery thereof and a second wafer bonded with the first wafer, by grinding and thinning the first wafer, the processing method comprising:

• a protective film arrangement step of arranging a protective film on a side of the second wafer;
• a chamfered-portion removing step of holding the bonded wafer on a side of the protective film on a chuck table of a processing machine configured to remove the chamfered portion and removing the chamfered portion formed on the outer periphery of the first wafer;
• a rinsing step of rinsing the bonded wafer from which the chamfered portion has been removed;
• a peeling step of peeling off the protective film from the second wafer;
• and
• a grinding step of holding the bonded wafer on the side of the second wafer on a chuck table of a grinding machine and grinding the first wafer.