Detection device
AssigneesJapan Display Inc., The University of Tokyo
InventorsTakashi NAKAMURA, Makoto UCHIDA, Masahiro TADA, Marina MOCHIZUKI, Hirofumi KATO, Akio TAKIMOTO, Takao SOMEYA, Tomoyuki YOKOTA
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Abstract
A detection device includes a photodiode, and a thin-film transistor coupled to the photodiode. The thin-film transistor includes a semiconductor layer between a light-blocking layer and the photodiode, and an electrode layer between the semiconductor layer and the photodiode, and the electric layer includes a source electrode and a drain electrode of the thin-film transistor. The source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween.
Claims8
A detection device comprising
- a plurality of optical sensors arranged planarly,
- wherein
- the optical sensors respectively acquire degrees of variations of outputs in each first period,
- one of the optical sensors having a largest degree of variation of the outputs among respective optical sensors is identified as a first optical sensor, and
- an output of the first optical sensor is identified as pulse wave data.
Dependencies are inferred from the claim text.