Optoelectric device and electronic device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyungsang CHO, Hojung KIM, Chanwook BAIK, Yooseong YANG
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Abstract
Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.
Claims17
An optoelectronic device comprising:
- a first electrode;
- a second electrode spaced apart from the first electrode;
- an active layer provided between the first electrode and the second electrode, the active layer comprising a plurality of quantum dot layers having different energy bands, the active layer comprising a p-type first quantum dot layer and an n-type second quantum dot layer;
- an electron transport layer provided between the first electrode and the active layer;
- and
- a hole transport layer provided between the active layer and the second electrode;
- wherein a thickness of the electron transport layer and a thickness of the hole transport layer are determined such that a maximum external quantum efficiency of the optoelectronic device is obtained at a value that is higher than 35%.
An image sensor comprising:
- a sensor array comprising a plurality of light-sensors respectively comprising an optoelectronic device, the optoelectronic device comprising:
- a first electrode;
- a second electrode spaced apart from the first electrode;
- an active layer provided between the first electrode and the second electrode, the active layer comprising a plurality of quantum dot layers having different energy bands, the active layer comprising a p-type first quantum dot layer and an n-type second quantum dot layer;
- an electron transport layer provided between the first electrode and the active layer;
- and
- a hole transport layer provided between the active layer and the second electrode;
- wherein a thickness of the electron transport layer and a thickness of the hole transport layer are determined such that a maximum external quantum efficiency of the optoelectronic device is obtained at a value that is higher than 35%;
- and
- a circuit comprising circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.
An electronic device comprising:
- an imaging device configured to form an optical image by focusing light reflected from a subject;
- and
- an image sensor configured to convert the optical image formed by the imaging device into an electrical signal, the image sensor comprising:
- a sensor array comprising a plurality of light-sensors respectively comprising an optoelectronic device, the optoelectronic device comprising:
- a first electrode;
- a second electrode spaced apart from the first electrode;
- an active layer provided between the first electrode and the second electrode, the active layer comprising a plurality of quantum dot layers having different energy bands, the active layer comprising a p-type first quantum dot layer and an n-type second quantum dot layer;
- an electron transport layer provided between the first electrode and the active layer;
- and
- a hole transport layer provided between the active layer and the second electrode;
- wherein a thickness of the electron transport layer and a thickness of the hole transport layer are determined such that a maximum external quantum efficiency of the optoelectronic device is obtained at a value that is higher than 35%;
- and
- a circuit comprising circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.
Dependencies are inferred from the claim text.