Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKUAN-TING PAN, JIA-CHUAN YOU, CHIA-HAO CHANG, KUO-CHENG CHIANG, CHIH-HAO WANG
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes a first dielectric wall over a substrate, and two metal gate structures disposed at two sides of the first dielectric wall. Each of the metal gate structures includes a plurality of nanosheets stacked over the substrate and separated from each other, a high-k gate dielectric layer covering each of the nanosheets, and a metal layer covering and over the plurality of nanosheets and the high-k gate dielectric layer. The high-k gate dielectric layer of each metal gate structure is disposed between the metal layer of each metal gate structure and the first dielectric wall.
Claims20
A semiconductor structure comprising:
- a first dielectric wall over a substrate;
- and
- two metal gate structures disposed at two sides of the first dielectric wall, wherein each of the metal gate structures comprises:
- a plurality of nanosheets stacked over the substrate and separated from each other;
- a high-k gate dielectric layer covering each of the nanosheets;
- and
- a metal layer covering and over the plurality of nanosheets and the high-k gate dielectric layer,
- wherein the high-k gate dielectric layer of each metal gate structure is disposed between the metal layer of each metal gate structure and the first dielectric wall.
A semiconductor structure comprising:
- a first dielectric wall;
- a second dielectric wall disposed in the first dielectric wall;
- a pair of first metal gate structures, wherein the first dielectric wall and the second dielectric wall are disposed between the pair of first metal gate structures;
- a pair of third dielectric walls, wherein the first dielectric wall, the second dielectric wall, the pair of first metal gate structures are disposed between the pair of third dielectric walls;
- and
- a pair of second metal gate structures, wherein the pair of third dielectric walls, the pair of first metal gate structures, the first dielectric wall and the second dielectric wall are disposed between the pair of second metal gate structures.
A method for forming a semiconductor structure, comprising:
- forming a nanosheet stack over a substrate, wherein the nanosheet stack comprises a plurality of nanosheets extending in a first direction;
- forming a sacrificial gate structure over the nanosheet stack and extending in a second direction;
- removing a portion of the sacrificial gate structure to form a first trench extending in the first direction;
- forming a first dielectric wall in the first trench;
- removing a remaining portion of the sacrificial gate structure to form a plurality of second trenches extending in the second direction, wherein the nanosheet stack is exposed through the second trenches;
- removing portions of the nanosheet stack to form a plurality of nanosheets separated from each other;
- forming a high-k gate dielectric layer and a first metal layer in the second trenches;
- forming a second dielectric wall in the second trenches;
- and
- forming a second metal layer over the second dielectric wall.
Dependencies are inferred from the claim text.